Datasheet> 器件分类 > 分立半导体> 二极管> SMAJ530/11-E3

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SMAJ530/11-E3: 产品描述DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor; 产品类别分立半导体二极管; 文件大小44KB，共2页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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SMAJ530/11-E3概述

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor

SMAJ530/11-E3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Vishay(威世)
包装说明	R-PDSO-C2
Reach Compliance Code	unknown
ECCN代码	EAR99
最大击穿电压	550 V
最小击穿电压	530 V
配置	SINGLE
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	DO-214AC
JESD-30 代码	R-PDSO-C2
JESD-609代码	e3
湿度敏感等级	1
最大非重复峰值反向功率耗散	300 W
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性	UNIDIRECTIONAL
最大功率耗散	1 W
认证状态	Not Qualified
最大重复峰值反向电压	477 V
表面贴装	YES
技术	AVALANCHE
端子面层	MATTE TIN
端子形式	C BEND
端子位置	DUAL
处于峰值回流温度下的最长时间	40

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SMAJ530 and SMAJ550

DO-214AC (SMA)

Cathode Band

Surface Mount TransZorb

Transient Voltage Suppressors

0.065 (1.65)

0.049 (1.25)

0.110 (2.79)

0.100 (2.54)

odu

Steady State Power

Peak Pulse Power

300W

Reverse Voltage

530,550V

Mounting Pad Layout

0.094 MAX

(2.38 MAX)

0.177 (4.50)

0.157 (3.99)

0.012 (0.305)

0.006 (0.152)

0.060 MIN

(1.52 MIN)

0.090 (2.29)

0.078 (1.98)

Dimensions in inches

and (millimeters)

0.050 MIN

(1.27 MIN)

0.220 REF

(5.58)

0.060 (1.52)

0.030 (0.76)

0.008 (0.203) MAX.

0.208 (5.28)

0.194 (4.93)

Mechanical Data

Case:

JEDEC DO-214AC molded plastic body over

passivated chip

Terminals:

Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity:

The band denotes the cathode, which is positive with

respect to the anode under normal TVS operation

Mounting Position:

Any

Weight:

0.002 oz, 0.064g

Packaging codes/options:

5A/7.5K per 13” Reel (12mm Tape)

11/1.8K per 7” Reel (12mm Tape)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Protects power IC controllers such as TOPSwitch

• Glass passivated junction

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

• Excellent clamping capability

• Available in unidirectional only

Maximum Ratings and Thermal Characteristics

Parameter

Device marking code

Steady state power dissipation

(3)

Peak pulse power dissipation

(1)(2)(5)

(Fig. 1)

Stand-off voltage

Typical thermal resistance junction-to-lead

Typical thermal resistance junction-to-ambient

Operating junction and storage temperature range

M(AV)

PPM

θJL

θJA

, T

STG

Symbol

= 25

C unless otherwise noted.

SMAJ530

1.0

SMAJ550

Unit

495

°C/W

°C

Minimum 300

477

–55 to +150

Electrical Characteristics

Minimum breakdown voltage at 100µA

= 25

C unless otherwise noted.

(BR)

530

660

5.0

650

550

µA

mV°C

Max. clamping voltage at 400mA, 10/1000µs

waveform

Maximum DC reverse leakage current at V

Typical temperature coefficient of V

(BR)

Typical capacitance

(4)

at 0V

at 200V

7.5

(4) Measured at 1MH

(5) Peak pulse power waveform is 10/1000µs.

Notes:

(1) Non repetitive current pulse per Fig.3 and derated above 25

C per Fig. 2

(2) Mounted on 5.0mm

copper pads to each terminal

(3) Lead temperature at 75

C = T

10/24/00

SMAJ530/11-E3相似产品对比

	SMAJ530/11-E3	SMAJ550/11-E3	SMAJ550/2G	SMAJ550/2F	SMAJ530/2F	SMAJ550-E3/11
描述	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor	Trans Voltage Suppressor Diode, 300W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC	Trans Voltage Suppressor Diode, 300W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC	Trans Voltage Suppressor Diode, 300W, 477V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor
包装说明	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大击穿电压	550 V	550 V	550 V	550 V	550 V	550 V
最小击穿电压	530 V	530 V	530 V	530 V	530 V	530 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC
JESD-30 代码	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
最大非重复峰值反向功率耗散	300 W	300 W	300 W	300 W	300 W	300 W
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
最大功率耗散	1 W	1 W	1 W	1 W	1 W	1 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	477 V	495 V	495 V	495 V	477 V	495 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子形式	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
厂商名称	Vishay(威世)	Vishay(威世)	-	-	Vishay(威世)	Vishay(威世)

SMAJ530/11-E3

SMAJ530/11-E3概述

SMAJ530/11-E3规格参数

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