SI4884
TrenchMOS™ logic level FET
M3D315
Rev. 02 — 12 April 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
SI4884 in SOT96-1 (SO8).
1.2 Features
s
Low on-state resistance
s
Fast switching.
1.3 Applications
s
DC to DC converters
s
Portable equipment applications.
1.4 Quick reference data
s
V
DS
= 30 V
s
P
tot
= 2.5 W
s
I
D
= 12 A
s
R
DSon
= 16.5 mΩ.
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
g
1
Top view
4
MBK187
Simplified outline
8
5
Symbol
d
MBB076
s
SOT96-1 (SO8)
Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
drain-source voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current
T
sp
= 25
°C
T
sp
= 25
°C;
Figure 2
and
3
T
sp
= 25
°C;
pulsed;
Figure 3
T
sp
= 25
°C;
Figure 1
Conditions
T
j
= 25 to 150
°C
Min
-
-
-
-
-
−55
−55
-
Max
30
±20
12
45
2.5
+150
+150
12
Unit
V
V
A
A
W
°C
°C
A
Source-drain diode
9397 750 09582
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 April 2002
2 of 12
Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
03aa17
120
Pder
(%)
120
I
der
(%)
80
03aa25
80
40
40
0
0
50
100
150
Tsp (ºC)
200
0
0
50
100
150
200
Tsp ( C)
o
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
5 V
I
D
I
der
=
-------------------
×
100%
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
102
ID
(A)
10
Limit RDSon = VDS / ID
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
003aaa160
1
DC
tp =
10
µs
100
µs
1 ms
10 ms
1s
10-1
10-2
10-1
1
10
VDS (V)
102
T
sp
= 25
°C;
I
DM
is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09582
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 April 2002
3 of 12
Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
4. Thermal characteristics
Table 3:
R
th(j-a)
Thermal characteristics
Conditions
Min
Typ
60
Max
-
Unit
K/W
thermal resistance from junction to ambient mounted on a printed circuit board; -
t
p
≤
10 s; minimum footprint;
Figure 4
Symbol Parameter
4.1 Transient thermal impedance
102
Zth(j-a)
(K/W)
δ
= 0.5
003aaa161
0.2
10
0.1
0.05
0.02
P
δ
=
tp
T
single pulse
tp
T
t
1
10-4
10-3
10-2
10-1
1
10
tp (s)
102
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 09582
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 April 2002
4 of 12
Philips Semiconductors
SI4884
TrenchMOS™ logic level FET
5. Characteristics
Table 4:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
gate-source threshold voltage
drain-source leakage current
I
D
= 250
µA;
V
GS
= 0 V
I
D
= 250
µA;
V
DS
= V
GS
;
Figure 9
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 100
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 10 A;
Figure 7
and
8
V
GS
= 10 V; I
D
= 12 A;
Dynamic characteristics
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
S
= 1 A; V
GS
= 0 V;
Figure 12
reverse recovery time
I
S
= 2.3 A; dI
S
/dt =
−100
A/µs; V
GS
= 0 V
V
DD
= 16 V; R
D
= 10
Ω;
V
GS
= 10 V
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz;
Figure 11
V
DS
= 15 V; I
D
= 10 A;
I
D
= 15 A; V
DD
= 16 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
34
17.6
4
4.4
391
190
10.6
11.7
37
19
0.7
70
-
-
-
-
-
-
-
-
-
-
1.0
-
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
-
-
-
-
-
11
8.9
-
-
1
5
100
16.5
10.5
µA
µA
nA
mΩ
mΩ
30
1
-
-
-
2
V
V
Conditions
Min
Typ
Max
Unit
1335 -
Source-drain (reverse) diode
9397 750 09582
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 — 12 April 2002
5 of 12
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