Small Signal Field-Effect Transistor, 0.6A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Supertex |
包装说明 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
其他特性 | LOW THRESHOLD |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 160 V |
最大漏极电流 (Abs) (ID) | 0.6 A |
最大漏极电流 (ID) | 0.6 A |
最大漏源导通电阻 | 12 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 35 pF |
JEDEC-95代码 | TO-39 |
JESD-30 代码 | O-MBCY-W3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL |
功耗环境最大值 | 6 W |
最大功率耗散 (Abs) | 6 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | WIRE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
TP0616N2 | TP0616N5 | TP0620N2 | TP0616ND | TP0620ND | |
---|---|---|---|---|---|
描述 | Small Signal Field-Effect Transistor, 0.6A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Power Field-Effect Transistor, 1.4A I(D), 160V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Small Signal Field-Effect Transistor, 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Small Signal Field-Effect Transistor, 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Supertex | Supertex | Supertex | Supertex | Supertex |
包装说明 | CYLINDRICAL, O-MBCY-W3 | FLANGE MOUNT, R-PSFM-T3 | CYLINDRICAL, O-MBCY-W3 | UNCASED CHIP, S-XUUC-N3 | UNCASED CHIP, S-XUUC-N3 |
Reach Compliance Code | unknow | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 160 V | 160 V | 200 V | 160 V | 200 V |
最大漏源导通电阻 | 12 Ω | 12 Ω | 12 Ω | 12 Ω | 12 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 35 pF | 35 pF | 35 pF | 35 pF | 35 pF |
JESD-30 代码 | O-MBCY-W3 | R-PSFM-T3 | O-MBCY-W3 | S-XUUC-N3 | S-XUUC-N3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | METAL | PLASTIC/EPOXY | METAL | UNSPECIFIED | UNSPECIFIED |
封装形状 | ROUND | RECTANGULAR | ROUND | SQUARE | SQUARE |
封装形式 | CYLINDRICAL | FLANGE MOUNT | CYLINDRICAL | UNCASED CHIP | UNCASED CHIP |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | YES | YES |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD |
端子形式 | WIRE | THROUGH-HOLE | WIRE | NO LEAD | NO LEAD |
端子位置 | BOTTOM | SINGLE | BOTTOM | UPPER | UPPER |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
外壳连接 | DRAIN | DRAIN | DRAIN | - | - |
最大漏极电流 (Abs) (ID) | 0.6 A | 1.4 A | 0.6 A | - | - |
最大漏极电流 (ID) | 0.6 A | 1.4 A | 0.6 A | - | - |
JEDEC-95代码 | TO-39 | TO-220AB | TO-39 | - | - |
功耗环境最大值 | 6 W | 45 W | 6 W | - | - |
最大功率耗散 (Abs) | 6 W | 45 W | 6 W | - | - |
零件包装代码 | - | SFM | - | DIE | DIE |
针数 | - | 3 | - | 3 | 3 |
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