High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DESCRIPTION
The DG2016/DG2026 are monolithic CMOS dual
single-pole/double-throw (SPDT) analog switchs. They are
specifically designed for low-voltage, high bandwidth
applications.
The DG2016/DG2026’s on-resistance (3
at 2.7 V),
matching and flatness are guaranteed over the entire analog
voltage range. Wide dynamic performance is achieved with
better than - 80 dB for both cross-talk and off-isolation at
1 MHz.
Both SPDT’s operate with independent control logic,
conduct equally well in both directions and block signals up
to the power supply level when off. Break-before-make is
guaranteed.
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2016/DG2026
are ideally suited for audio and video switching with high
linearity.
Built on Vishay Siliconix’s low voltage CMOS technology, the
DG2016/DG2026 contain an epitaxial layer which prevents
latch-up
FEATURES
•
Halogen-free according to IEC 61249-2-21
Definition
• Single Supply (1.8 V to 5.5 V)
• Low On-Resistance - R
ON
: 2.4
• Crosstalk and Off Isolation: - 81 dB at 1 MHz
• MSOP-10 Package
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduce Board Space
Low-Voltage Logic Compatible
High Bandwidth
APPLICATIONS
•
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Low-Voltage Data Acquisition
ATE
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2016DQ – MSOP-10
IN1
NO1
GND
NO2
IN2
1
2
3
4
5
Top View
10
9
8
7
6
COM1
NC1
V+
NC2
COM2
TRUTH TABLE
Logic
0
1
NC1 and NC2
ON
OFF
NO1 and NO2
OFF
ON
DG2026DQ – MSOP-10
IN1
NC1
GND
NC2
IN2
1
2
3
4
5
Top View
10
9
8
7
6
COM1
NO1
V+
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
MSOP-10
Part Number
DG2016DQ-T1-E3
DG2026DQ-T1-E3
NO2
COM2
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2016, DG2026
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
- 65 to 150
MSOP-10
c
320
Unit
V
mA
°C
mW
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4 mW/°C above 70 °C.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.4 V or 2 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
Switch Off
Leakage Current
f
Channel-On
Leakage Current
f
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Current
Symbol
V
NO
, V
NC
V
COM
R
ON
R
ON
Flatness
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
Full
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V, I
NO
, I
NC
= 10 mA
V+ = 2.7 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
V+ = 3.3 V
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
V
NO
or V
NC
= 2 V, R
L
= 50
,
C
L
= 35 pF
Room
Full
Full
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
V
IN
= 0 V or V+, f = 1 MHz
Room
Room
Room
V
IN
= 0 V or V+
Full
0
3
V+
4.8
5.3
1.6
V
-1
- 10
-1
- 10
-1
- 10
1.6
1
10
1
10
1
10
nA
V
INH
V
INL
C
in
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
I+
0.4
5
1
28
13
1
38
- 78
- 82
15
15
49
45
0.01
1
1
53
59
38
38
V
pF
µA
ns
pC
dB
pF
µA
www.vishay.com
2
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2016, DG2026
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
Switch Off
Leakage Current
Channel-On
Leakage Current
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Source-Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
Symbol
V
NO
, V
NC
V
COM
R
ON
R
ON
Flatness
I
NO(off)
I
NC(off)
I
COM(off)
I
COM(on)
Full
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
V+ = 4.5 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
V+ = 5.5 V, V
NO
, V
NC
= V
COM
=1 V/4.5 V
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
V
IN
= 0 V or V+
Full
Room
Full
V
NO
or V
NC
= 3 V, R
L
= 50
,
C
L
= 35 pF
Room
Full
Full
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Room
Room
Room
V
IN
= 0 V or V+, f = 1 MHz
Room
Room
Room
0
2.4
V+
4
4.3
1.2
V
-1
- 10
-1
- 10
-1
- 10
2
1
10
1
10
1
10
nA
V
INH
V
INL
C
in
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on
V+
I+
V
IN
= 0 V or V+
0.8
5
1
23
8
1
79
- 81
- 82
14
14
48
44
1.8
5.5
0.01
1
1
48
52
33
35
V
pF
µA
ns
pC
dB
pF
V
µA
Full
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2016, DG2026
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
7
T = 25
°C
I
S
= 10 mA
5
4
R
ON
- On-Resistance ()
6
5
4
3
2
1
0
0
1
2
3
V
COM
- Analog Voltage (V)
4
5
V+ = 3.0 V
V+ = 5.0 V
R
ON
- On-Resistance ()
V+ = 3 V
85
°C
3
25
°C
- 40
°C
2
V+ = 5 V
1
85
°C
25
°C
- 40
°C
0
0
1
2
3
4
5
V
COM
- Analog Voltage (V)
R
ON
vs. V
COM
and Supply Voltage
R
ON
vs. Analog Voltage and Temperature
10 000
10 mA
V+ = 5 V
1 mA
I+ - Supply Current (nA)
I+ - Supply Current (A)
1000
100 µA
100
V+ = 5 V
V
IN
= 0 V
10 µA
1 µA
10
V+ = 3 V
V
IN
= 0 V
100 nA
1
- 60
10 nA
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
10
100
1K
10 K
100 K
1M
Input Switching Frequency (Hz)
10 M
Supply Current vs. Temperature
10 000
V+ = 5 V
1000
Leakage Current (pA)
I
NO(off)
, I
NC(off)
Leakage Current (pA)
Supply Current vs. Input Switching Frequency
100
75
50
25
0
I
NO(off)
, I
NC(off)
- 25
- 50
- 75
I
COM(on)
I
COM(off)
V+ = 5 V
100
I
COM(off)
I
COM(on)
10
1
- 60
- 100
- 40
- 20
0
20
40
60
80
100
0
1
2
3
4
5
Temperature (°C)
V
COM
, V
NO
, V
NC
- Analog Voltage (V)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
www.vishay.com
4
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2016, DG2026
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
R
L
= 50
t
ON
/ t
OFF
- Switching Time (µs)
50
Loss, OIRR, X
TALK
(dB)
- 10
LOSS
10
40
t
ON
V+ = 3 V
- 30
30
20
t
OFF
V+ = 3 V
10
t
ON
V+ = 5 V
- 50
OIRR
- 70
X
TA LK
V+ = 5 V
R
L
= 50
t
OFF
V+ = 5 V
0
- 60
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
- 90
100 K
1M
10 M
Frequency (Hz)
100 M
1G
Switching Time vs. Temperature
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
80
60
3.0
- Switching Threshold (V)
2.5
Q - Charge Injection (pC)
40
20
V+ = 5 V
0
- 20
V+ = 3 V
- 40
- 60
2.0
1.5
1.0
V
T
0.5
0.0
0
1
2
3
4
5
V+ - Supply Voltage (V)
6
7
- 80
0
1
2
3
4
V
COM
- Analog Voltage (V)
5
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
IN
Logic
Input
GND
0V
C
L
(includes fixture and stray capacitance)
V
OUT
= V
COM
R
L
R
L
+ R
ON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
R
L
50
C
L
35 pF
COM
Switch Output
V
OUT
0.9 x V
OUT
Switch
Output
0V
t
ON
t
OFF
V
INH
50 %
V
INL
t
r
< 5 ns
t
f
< 5 ns
Figure 1. Switching Time
Document Number: 72030
S11-1185-Rev. D, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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