TA8211AH
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8211AH
Dual Audio Power Amplifier
The TA8211AH is dual audio power amplifier for consumer
applications.
This IC provides an output power of 6 watts per channel
(at V
CC
= 20 V, f = 1 kHz, THD = 10%, R
L
= 8
Ω).
It is suitable for power amplifier of TV and home stereo.
Features
·
·
High output power: P
out
= 6 W/channel (Typ.)
(V
CC
= 20 V, R
L
= 8
Ω,
f = 1 kHz, THD = 10%)
Low noise: V
no
= 0.14 mVrms (Typ.)
(V
CC
= 28 V, R
L
= 8
Ω,
G
V
= 34dB, R
g
= 10 kΩ,
BW = 20 Hz~20 kHz)
·
·
·
Very few external parts
Built in thermal shut down protector circuit
Operating supply voltage range: V
CC (opr)
= 10~30 V (Ta = 25°C)
Weight: 4.04 g (typ.)
Block Diagram
V
CC
6
Ripple Filter
INPUT1
4
8
5
3
1
11
AMP2
INPUT2
2
IN2
OUT2
12
R
L
400
W
Pre-GND
400
W
20 kW
PW-GND 10
20 kW
R
L
IN1
AMP1
OUT1
7
9
V
CC
1
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TA8211AH
Application Information
Voltage gain
The closed loop voltage gain is determined by R
1
, R
2
.
Input
4/2
5/1
8/11
R
2
400
W
R
1
20 kW
7/12
Output
G
V
R
+
R
2
(dB)
=
20
l
og
1
R
2
=
20log
20 k
W +
400
W
400
W
~
34 (dB)
-
Figure 1
Input
4/2
5/1
8/11
R
2
400
W
R
1
20 kW
7/12
Output
(a)
Amplifier with gain > 34dB
R
+
R
2
//R
3
(dB)
G
V
=
20
l
og
1
R
2
//R
3
When R
3
=
400
W
G
V
~
40 (dB)
-
is given.
(b)
Amplifier with gain < 34dB
G
V
=
20
l
og
R
1
+
R
2
+
R
4
(dB)
R
2
+
R
4
Input
4/2
R
4
5/1
8/11
Figure 2
When R
4
=
220
W
G
V
~
30 (dB)
-
is given.
R
2
400
W
R
1
20 kW
7/12
Output
Figure 3
Cautions
This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.
2
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TA8211AH
Standard PCB
(Bottom view)
3
2002-02-13
TA8211AH
Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Output current (Peak/ch)
Power dissipation
Operating temperature
Storage temperature
Symbol
V
CC
I
O (peak)
P
D
(Note)
T
opr
T
stg
Rating
30
2
25
-20~75
-55~150
Unit
V
A
W
°C
°C
Note: Derated above Ta
=
25°C in the proportion of 200 mW/°C.
Electrical Characteristics
Characteristics
Quiescent current
Output power
Total harmonic distortion
Closed loop voltage gain
Open loop voltage gain
Input resistance
Ripple rejection ratio
Output noise voltage
(unless otherwise specified, V
CC
=
20 V, R
L
=
600
9
, R
g
=
600
9
, f
=
1 kHz, Ta
=
25°C)
Symbol
I
CCQ
P
out (1)
P
out (2)
THD
G
V
G
VO
R
IN
R.R.
V
no
Test
Circuit
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Rg
=
0, f
ripple
=
100 Hz
V
ripple
=
0.775 Vrms (0dBm)
Rg
=
10 kW,
BW
=
20 Hz~20 kHz
V
in
=
0
THD
=
10%
THD
=
1%
P
out
=
2 W
V
out
=
0.775 Vrms (0dBm)
Test Condition
Min
¾
5.0
¾
¾
32.5
¾
¾
-45
¾
Typ.
75
6.0
4.5
0.1
34.0
60
30
-57
0.14
Max
130
¾
¾
0.6
35.5
¾
¾
¾
0.3
Unit
mA
W
%
dB
dB
kW
dB
mVrms
Typ. DC Voltage of Each Terminal
(V
CC
=
20 V, Ta
=
25°C)
Terminal No.
DC voltage (V)
1
2.1
2
2.25
3
GND
4
2.25
5
2.1
6
6.8
7
9.8
8
2.25
9
V
CC
10
GND
11
2.25
12
9.8
4
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TA8211AH
Test Circuit
100
mF
1000
mF
V
CC
6
Ripple Filter
INPUT1
4
8
47
mF
47
mF
5
3
1
11
AMP2
INPUT2
1.0
mF
2
IN2
400
W
Pre-GND
400
W
20 kW
IN1
9
1.0
mF
2.2
W
AMP1
OUT1
7
1000
mF
0.12
mF
0.12
mF
R
L
PW-GND 10
20 kW
2.2
W
R
L
OUT2
12
1000
mF
5
2002-02-13