US5L11
Transistors
Absolute maximum ratings
(Ta=25°C)
Tr1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector current
I
CP
Power dissipation
Pc
Junction temperature
Tj
Range of storage temperature
Tstg
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Limits
−30
−30
−6
−1
−2
0.7
150
−40
to
+125
Unit
V
V
V
A
∗1
A
W/ELEMENT
∗2
°C
°C
∗1
Single pulse, Pw=1ms.
∗2
Mounted on a 25mm×25mm×
t
0.8mm ceramic substrate
Di2
Parameter
Symbol
Peak reverse voltage
V
RM
Reverse voltage (DC)
V
R
Average rectified forward current
I
F
Forward current surge peak (60H
Z
, 1∞)
I
FSM
Power dissipation
P
D
Junction temperature
Tj
Range of storage temperature
Tstg
∗
Mounted on a 25mm×25mm×
t
0.8mm ceramic substrate
Limits
25
20
700
3
0.5
125
−40
to
+125
Unit
V
V
mA
A
W/ELEMENT
°C
°C
∗
Tr1& Di2
Parameter
Total power dissipation
Symbol
P
D
Limits
0.4
1.0
Unit
W/TOTAL
W/TOTAL
∗1
∗2
∗1
Each terminal mounted on a recommended land
∗2
Mounted on a 25mm×25mm×
t
0.8mm ceramic substrate
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−150
−
320
7
Max.
−
−
−
−100
−100
−350
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
I
C
=−10µA
I
C
=−1mA
I
E
=−10µA
V
CB
=−30V
V
EB
=−6V
I
C
=−500mA,
I
B
=−25mA
V
CE
=−2V,
I
C
=−100mA
∗
V
CE
=−2V,
I
E
=100mA,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
∗
Di2
Parameter
Symbol
V
F
I
R
Min.
−
−
Typ.
450
−
Max.
490
200
Unit
mV
µA
I
F
=700mA
V
R
=20V
Conditions
Forward voltage
Reverse current
Reverse recovery time
trr
−
9
−
ns
I
F
=I
R
=100mA, Irr=0.1I
R
Rev.A
2/4
US5L11
Transistors
Electrical characteristic curves
Tr1
Ta=100°C
V
CE
=−2V
Pulsed
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
I
C
/I
B
=20/1
Pulsed
Ta=−40°C
Ta=25°C
Ta=100°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1000
10
10
Ta=25°C
Pulsed
DC CURRENT GAIN : h
FE
Ta=25°C
Ta=−40°C
1
I
C
/I
B
=20/1
1
V
BE(sat)
100
0.1
I
C
/I
B
=50/1
I
C
/I
B
=10/1
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
0.01
10
0.001
0.01
0.1
1
10
V
CE(sat)
0.01
0.001
0.01
0.1
1
0.001
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
1
TRANSITION FREQUENCY : f
T
(MHz)
V
CE
=−2V
Pulsed
Ta=100°C
1000
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
V
CE
=−2V
f=100MHz
1000
tstg
Ta=25°C
V
CE
=−5V
I
C
/I
B
=20/1
0.1
Ta=25°C
SWITCHING TIME : (ns)
100
tf
tr
tdon
Ta=−40°C
100
0.01
10
0.001
0
0.5
1
1.5
10
0.01
0.1
EMITTER CURRENT : I
E
(A)
1
1
0.01
0.1
COLLECTOR CURRENT : I
C
(A)
1
BASE TO EMITTER CURRENT : V
BE
(V)
Fig.4 Grounded emitter propagation
characteristics
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Switching time
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
Cib
Cob
Ta
=
25°C
I
C
=
0A
f
=
1MHz
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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