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FMBM5551 — NPN General Purpose Amplifier
September 2008
FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
C2
E1
C1
B2
E2
pin #1 B1
Mark: .3S2
Dot denotes pin #1
SuperSOT
TM
-6
Absolute Maximum Ratings *
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
T
qJA
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Value
160
180
6
600
0.7
150
-55 ~ 150
180
Units
V
V
V
mA
W
°C
°C
°C/W
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE1
DIVID1
h
FE2
DIVID2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
T
C
= 25°C unless otherwise noted
Parameter
Conditions
I
C
= 1mA, I
B
= 0
I
C
= 100mA, I
E
= 0
I
C
= 10mA, I
C
= 0
V
CB
= 120V
V
CB
= 120V, T
a
= 100°C
V
EB
= 4V
V
CE
= 5V, I
C
= 1mA
h
FE1
(Die1)/h
FE1
(Die2)
V
CE
= 5V, I
C
= 10mA
h
FE2
(Die1)/h
FE2
(Die2)
Min.
160
180
6
Max
Units
V
V
V
50
50
50
80
0.9
80
0.95
1.1
250
1.05
nA
mA
nA
On Characteristics
Variation Ratio of h
FE1
Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h
FE2
Between Die 1 and Die 2
© 2007 Fairchild Semiconductor Corporation
FMBM5551 Rev. 1.0.0
1
www.fairchildsemi.com
FMBM5551 — NPN General Purpose Amplifier
Electrical Characteristics
(Continued)
Symbol
h
FE3
DIVID3
V
CE(sat)
V
BE(sat)
V
BE(on)
DEL
C
ob
C
ib
f
T
NF
h
fe
DC Current Gain
T
C
= 25°C unless otherwise noted
Parameter
Variation Ratio of h
FE3
Between Die 1 and Die 2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Difference of V
BE(on)
Between Die1 and Die 2
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Conditions
V
CE
= 5V, I
C
= 50mA
h
FE3
(Die1)/h
FE3
(Die2)
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 5V, I
C
= 10mA
V
BE(on)
(Die1)-V
BE(on)
(Die2)
V
CB
= 10V, f = 1MHz
V
CB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 10mA, f =
100MHz
V
CE
= 5V, I
C
= 200mA, f = 1MHz,
R
S
= 20KW, B = 200Hz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
Min.
30
0.9
Max
1.1
0.15
0.2
1
1
1
Units
V
V
V
V
V
mV
pF
pF
MHz
dB
-8
8
6
20
Small Signal Characteristics
100
300
8
50
250
© 2007 Fairchild Semiconductor Corporation
FMBM5551 Rev. 1.0.0
2
www.fairchildsemi.com
FMBM5551 — NPN General Purpose Amplifier
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
© 2007 Fairchild Semiconductor Corporation
FMBM5551 Rev. 1.0.0
3
www.fairchildsemi.com
FMBM5551 — NPN General Purpose Amplifier
Typical Characteristics
(Continued)
Figure 1. Input and Output Capacitance
vs Reverse Voltage
Figure 2. Small Signal current Gain
vs Collector Current
© 2007 Fairchild Semiconductor Corporation
FMBM5551 Rev. 1.0.0
4
www.fairchildsemi.com
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