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RN2205

产品描述Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
产品类别分立半导体    晶体管   
文件大小256KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN2205概述

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2205规格参数

参数名称属性值
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PSIP-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
最大功率耗散 (Abs)0.3 W
认证状态Not Qualified
表面贴装NO
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)200 MHz
Base Number Matches1

文档预览

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RN2201~RN2206
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1201~RN1206
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2201
RN2202
RN2203
RN2204
RN2205
RN2206
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2201~2206
RN2201~2206
RN2201~2204
RN2205, 2206
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
2-4E1A
1
2001-06-07

RN2205相似产品对比

RN2205 RN2201 RN2202 RN2203 RN2204 RN2206
描述 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 21.36 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 30 50 70 80 80
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
JESD-609代码 e0 e0 e0 e0 e0 e0
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
极性/信道类型 PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
厂商名称 - Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) -

 
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