The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
Ordering Information: Refer to Last Page
General Description
SAV-541-D+ is an ultra-low noise, high IP3 transistor die, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly
below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it
makes it an ideal amplifier for demanding base station applications.
Simplified Schematic and Pad description
DRAIN
GATE
SOURCE
Pad
Source
Gate
Drain
Description
Ground
RF-IN
RF-OUT
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
REV. OR
M155842
SAV-541-D+
RS/CP
160407
Page 1 of 5
E-PHEMT Transistor Die
DC Electrical Specifications
1
at T
AMB
=25°C, Frequency 0.45 to 6 GHz
Symbol
I
DSS
V
GS
V
TH
I
DSS
SAV-541-D+
Condition
15
V
DS
=3V, at respective I
DS
V
DS
=3V, I
DS
=4 mA
V
DS
=3V, V
GS
=0 V
V
DS
=3V, Gm=∆ I
DS
/∆V
GS
∆V
GS
=V
GS1
-V
GS2
V
GS1
=V
GS
at respective I
DS
V
GS2
=V
GS1
+0.05V
0.34
0.26
1.0
Parameter
Drain Current
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Typical
30
0.39
0.26
1.0
60
0.48
0.26
1.0
Units
mA
V
V
µA
G
M
Transconductance
251
327
392
mS
RF Electrical Specifications
2
V
DS
=3V
I
DS
=15mA
I
DS
=30mA
I
DS
=60mA
I
DS
=15mA
V
DS
=4V,
I
DS
=30mA
I
DS
=60mA
Symbol
NF
2
Parameter
Noise Figure
Condition (GHz)
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
0.9
2.0
3.9
5.8
Typ.
0.34
0.46
0.66
1.50
22.0
17.1
11.7
8.4
22.7
21.7
23.9
22.0
16.9
18.5
17.8
19.6
Typ.
0.28
0.35
0.62
1.18
22.4
17.1
12.0
7.6
27.7
27.4
30.2
28.3
17.3
18.1
17.7
18.8
Typ.
0.25
0.33
0.53
1.40
24.7
19.0
13.4
10.0
32.1
32.9
32.6
33.8
18.5
19.0
18.1
18.9
Typ.
0.35
0.5
0.63
1.47
22.0
17.1
11.8
8.4
23.0
22.1
24.4
22.5
20.0
21.4
20.2
22.3
Typ.
0.27
0.34
0.52
1.29
23.7
18.3
12.8
9.4
27.8
27.7
30.0
28.3
18.5
20.3
20.0
20.8
Typ.
0.25
0.38
0.53
1.36
24.7
19.1
13.5
10.1
32.3
33.1
35.7
35.8
20.6
21.0
20.4
20.8
Units
dB
Gain
Gain
dB
OIP3
Output IP3
dBm
P1dB
3
Power output at 1 dB
Compression
dBm
1. Measured on industry standard SOT-343 (SC-70) package.
2. Measured on die using GSG (Ground-Signal-Ground) probe. See figure 1.
3. Drain current was allowed to increase during compression measurements.
Absolute Maximum Ratings
4
Symbol
V
DS5
V
GS5
V
GD5
I
DS5
I
GS
P
DISS
P
IN6
T
CH
T
OP
Θ
JC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Gate Current
Total Dissipated Power
RF Input Power
Channel Temperature
Operating Temperature
Thermal Resistance
Max.
5
-5 to 0.7
-5 to 0.7
120
2
360
17
150
-40 to 85
160
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C/W
4. Operation of this device above any one of these parameters may cause permanent damage.
5. Assumes DC quiescent conditions.
6. I
GS
is limited to 2 mA during test.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 2 of 5
E-PHEMT Transistor Die
Characterization Test Circuit
SAV-541-D+
Source
Gate
Source
Source
Drain
Source
RF Reference Plane
Fig 1. Block Diagram of Test Circuit used.
Gain, Return loss, Output Power at 1dB compression (P1dB), Output IP3 (OIP3) and Noise figure measured using Agilent’s
N5242A PNA-X Microwave network analyzer.
Conditions:
SOURCE
1. Drain voltage (with reference to source, VDS)=3 or 4V as shown.
SOURCE
2. Gain voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown.
(Ground)
(Ground)
3. Gain:Pin=-25 dBm
4. Output IP3 (OIP3)= two
GATE
tones spaced 1 MHz apart. 0 dBm/tone at output.
DRAIN
5. No external matching components used.
Figure 1: Transistor Die Probe RF Reference Plane
(RF-IN)
(RF-OUT)
Die Layout
SOURCE
(Ground)
SOURCE
Bonding Pad Position
(Ground)
(Dimensions in µm, Typical)
Figure 2: SAV-541-D+ Die Diagram
TEST METHOD: RF Probe using MPI Titan Series 100um pitch GSG probe
Fig 2. Die Layout
Fig 3. Bonding Pad Positions
Critical Dimensions
Parameter
Die Thickness, µm
Die Width, µm
Die Length, µm
Bond Pad Size, µm
Values
100
400
400
75 x 75
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 3 of 5
E-PHEMT Transistor Die
Assembly and Handling Procedure
1. Storage
Dice should be stored in a dry nitrogen purged desiccators or equivalent.
SAV-541-D+
2. ESD
MMIC EPHEMPT amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta
tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter
ESD damage to dice.
3. Die Attach
The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat
DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet
height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s
cure condition. It is recommended to use antistatic die pick up tools only.
4. Wire Bonding
Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond
pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are
all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to
the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due
to undesirable series inductance.
Assembly Diagram
Recommended Wire Length, Typical
Wire
GATE, DRAIN
SOURCE (TO GROUND)
Wire Length (mm)
0.70
0.30
Wire Loop Height (mm)
0.15
0.15
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 4 of 5
E-PHEMT Transistor Die
Additional Detailed Technical Information
additional information is available on our dash board.
SAV-541-D+
Data Table
Performance Data
Swept Graphs
S-Parameter (S2P Files) Data Set with and without port extension
(.zip file)
Case Style
Die
Quantity, Package
Die Ordering and packaging
information
Small, Gel - Pak: 10,50,100 KGD*
Medium
†
, Partial wafer: KGD*<5K
Model No.
SVA-541-DG+
SVA-541-DP+
Refer to
AN-60-067
Environmental Ratings
ENV-80
ESD Rating
Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999
** Tested in industry standard 6-lead 400µmx400µm package.
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items
contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults.
E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known
Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond
ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental
effects on Known Good Dice.
F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini-
Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party
Notes
trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
third-party
performance data
or its products.
B.
Electrical specifications and
of Mini-Circuits
contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
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