Small Signal Field-Effect Transistor,
参数名称 | 属性值 |
厂商名称 | LRC |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 2.6 A |
最大漏源导通电阻 | 0.1 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
LN2308LT3G | LN2308LT1G | S-LN2308LT1G | S-LN2308LT3G | |
---|---|---|---|---|
描述 | Small Signal Field-Effect Transistor, | Small Signal Field-Effect Transistor, | Small Signal Field-Effect Transistor, | Small Signal Field-Effect Transistor, |
厂商名称 | LRC | LRC | LRC | LRC |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | unknow | unknow | unknow |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 2.6 A | 2.6 A | 2.6 A | 2.6 A |
最大漏源导通电阻 | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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