Preliminary Technical Information
GigaMOS
TM
Trench
TM
HiperFET
TM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
dv/dt
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
MMIX1F180N25T
V
DSS
I
D25
t
rr
=
=
R
DS(on)
250V
132A
13m
200ns
D
G
S
Maximum Ratings
250
250
20
30
132
500
90
5
570
20
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
V/ns
C
C
C
°C
°C
V~
N/lb
g
Isolated Tab
D
S
G
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
G = Gate
S = Source
Features
D = Drain
Maximum Lead Temperature for Soldering
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
300
260
2500
50..200 / 11..45
8
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
-
Excellent Thermal Transfer
-
Increased Temperature and Power
Cycling Capability
-
High Isolation Voltage (2500V~)
Very High Current Handling
Capability
Fast Intrinsic Diode
Avalanche Rated
Very Low R
DS(on)
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
250
3.0
5.0
200
Note 2, T
J
= 125C
V
V
nA
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
50
A
2.5 mA
13 m
V
GS
= 10V, I
D
= 90A, Note 1
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
© 2014 IXYS CORPORATION, All Rights Reserved
DS100438A(9/14)
MMIX1F180N25T
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
GI
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thJA
0.05
30
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 90A
Gate Input Resistance
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 90A
R
G
= 1 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
90
150
23.8
2070
47
1.1
35
52
88
20
364
137
60
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.22
C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 90A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 75V
11
0.77
Characteristic Values
Min. Typ.
Max.
180
720
1.3
A
A
V
200 ns
A
μC
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Part must be heatsunk for high-temp I
DSS
measurement.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
MMIX1F180N25T
Fig. 1. Output Characteristics @ T
J
= 25ºC
180
160
140
120
V
GS
= 10V
8V
7V
250
350
300
V
GS
= 10V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
100
80
60
6V
200
150
100
6V
40
20
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
0
2
4
6
8
10
12
50
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
180
160
140
120
100
80
60
40
20
4V
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
5V
6V
V
GS
= 10V
8V
7V
2.6
2.4
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 90A
I
D
= 180A
I
D
- Amperes
V
DS
- Volts
T
J
- Degrees Centigrade
2.4
2.2
2.0
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value vs.
Drain Current
V
GS
= 10V
T
J
= 125ºC
140
120
100
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
0
50
100
150
200
250
300
350
1.8
1.6
1.4
1.2
1.0
0.8
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
MMIX1F180N25T
Fig. 7. Input Admittance
200
180
160
140
200
25ºC
160
125ºC
120
80
40
20
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
6.6
0
0
20
40
60
80
100
120
140
160
180
200
280
T
J
= - 40ºC
240
Fig. 8. Transconductance
I
D
- Amperes
120
100
80
60
40
T
J
= 125ºC
25ºC
- 40ºC
V
GS
- Volts
g
f s
- Siemens
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 125V
I
D
= 90A
I
G
= 10mA
Fig. 10. Gate Charge
200
I
S
- Amperes
V
GS
- Volts
T
J
= 25ºC
6
5
4
3
2
1
150
T
J
= 125ºC
100
50
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0
50
100
150
200
250
300
350
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(
on
)
Limit
f
= 1 MHz
Ciss
Capacitance - PicoFarads
10,000
100
25µs
1,000
Coss
- Amperes
I
D
100µs
10
100
T
J
= 150ºC
Crss
10
0
5
10
15
20
25
30
35
40
1
10
100
1000
T
C
= 25ºC
Single Pulse
1ms
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1F180N25T
80
70
60
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
R
G
=1Ω , V
GS
= 15V
V
DS
= 125V
80
70
60
50
40
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 1Ω , V
GS
= 15V
V
DS
= 125V
t
r
- Nanoseconds
t
r
- Nanoseconds
50
40
30
I
D
= 180A
20
10
0
25
35
45
55
65
75
85
95
105
115
125
I
D
= 90A
T
J
= 125ºC
T
J
= 25ºC
30
20
10
90
100
110
120
130
140
150
160
170
180
T
J
- Degrees Centigrade
I
D
- Amperes
280
240
200
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
V
DS
= 125V
140
120
30
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
t
f
t
d(off)
- - - -
120
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
26
R
G
= 1Ω, V
GS
= 15V
V
DS
= 125V
I
D
= 180A
110
t
r
- Nanoseconds
t
f
- Nanoseconds
100
80
60
I
D
= 90A
40
20
0
t
d ( o f f )
- Nanoseconds
t
d ( o n )
- Nanoseconds
160
120
80
40
0
1
2
3
4
22
100
I
D
= 180A
18
I
D
= 90A
14
90
80
10
25
35
45
55
65
75
85
95
105
115
5
6
7
8
9
10
70
125
R
G
- Ohms
T
J
- Degrees Centigrade
26
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
t
f
t
d(off
)
- - - -
130
700
600
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t
f
V
DS
= 125V
560
480
t
d(off)
- - - -
24
R
G
= 1Ω, V
GS
= 15V
V
DS
= 125V
120
T
J
= 125ºC, V
GS
= 15V
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
f
- Nanoseconds
22
T
J
= 125ºC
20
T
J
= 25ºC
18
110
t
f
- Nanoseconds
500
400
300
200
100
0
1
400
320
100
I
D
= 180A
240
I
D
= 90A
160
80
0
90
16
80
14
90
100
110
120
130
140
150
160
170
70
180
2
3
4
5
6
7
8
9
10
I
D
- Amperes
R
G
- Ohms
© 2014 IXYS CORPORATION, All Rights Reserved
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