MDMA140P1200TG
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 1200 V
=
=
140 A
1.11 V
Phase leg
Part number
MDMA140P1200TG
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
TO-240AA
●
Isolation Voltage: 4800 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDMA140P1200TG
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.78
2.2
0.2
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
116
540
2.80
3.03
2.38
2.57
V
mΩ
K/W
W
kA
kA
kA
kA
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
100
3.5
1.18
1.43
1.11
1.41
140
V
µA
mA
V
V
V
V
A
V
R
= 1200 V
V
R
= 1200 V
I
F
= 140 A
I
F
= 280 A
I
F
= 140 A
I
F
= 280 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 100 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.23 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
39.2 kA²s
38.1 kA²s
28.3 kA²s
27.5 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDMA140P1200TG
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
76
2.5
2.5
13.0
16.0
9.7
16.0
4800
4000
4
4
UL
Logo
Date Code +
Location
yywwZ
Part description
Circuit
XXXXXXXX
123456
2D Barcode
Part Number
Lot#
M
D
M
A
140
P
1200
TG
=
=
=
=
=
=
=
=
Module
Diode
Standard Rectifier
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
TO-240AA
Ordering
Standard
Ordering Number
MDMA140P1200TG
Marking on Product
MDMA140P1200TG
Delivery Mode
Box
Quantity
36
Code No.
512703
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.78
1
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDMA140P1200TG
Outlines TO-240AA
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDMA140P1200TG
Rectifier
300
2500
10
5
V
R
= 0 V
250
2000
200
T
VJ
= 45°C
I
F
150
I
FSM
[A]
I
2
t
10
4
T
VJ
= 150°C
1500
2
[A]
100
[A s]
T
VJ
= 45°C
T
VJ
= 150°C
1000
50
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
0.5
1.0
1.5
2.0
50 Hz, 80%V
RRM
500
0.001
10
3
0.01
0.1
1
1
2
0
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
240
t [s]
Fig. 2 Surge overload current
vs. time per diode
200
180
t [ms]
Fig. 3 I t versus time per diode
200
160
P
tot
120
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
=
0.1 K/W
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
160
140
I
F(AV)M
120
100
DC =
1
0.5
0.4
0.33
0.17
0.08
[W]
80
[A]
80
60
40
20
0
0
50
100
150
0
50
100
150
0
0
50
100
150
40
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.25
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.20
Z
thJC
0.15
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.01
0.05
0.12
0.05
t
i
(s)
0.001
0.050
0.150
0.500
[K/W]
0.10
0.05
0.00
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
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