Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Littelfuse |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compli |
其他特性 | AVALANCHE RATED |
雪崩能效等级(Eas) | 0.75 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 150 V |
最大漏极电流 (ID) | 90 A |
最大漏源导通电阻 | 0.02 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 250 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Matte Tin (Sn) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
IXTQ90N15T | IXTA90N15T | IXTP90N15T | IXTH90N15T | |
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描述 | Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 90A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Littelfuse | Littelfuse | Littelfuse | Littelfuse |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compli | not_compliant | compliant | compliant |
其他特性 | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
雪崩能效等级(Eas) | 0.75 mJ | 0.75 mJ | 0.75 mJ | 0.75 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 150 V | 150 V | 150 V | 150 V |
最大漏极电流 (ID) | 90 A | 90 A | 90 A | 90 A |
最大漏源导通电阻 | 0.02 Ω | 0.02 Ω | 0.02 Ω | 0.02 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609代码 | e3 | e3 | e3 | e1 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 250 A | 250 A | 250 A | 250 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | NO | NO |
端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
JEDEC-95代码 | - | TO-263AB | TO-220AB | TO-247AD |
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