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CY7C1470BV33-200BZXC

产品描述2M X 36 ZBT SRAM, 3 ns, PQFP100
产品类别存储   
文件大小684KB,共30页
制造商Cypress(赛普拉斯)
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CY7C1470BV33-200BZXC概述

2M X 36 ZBT SRAM, 3 ns, PQFP100

2M × 36 ZBT 静态随机存储器, 3 ns, PQFP100

CY7C1470BV33-200BZXC规格参数

参数名称属性值
功能数量1
端子数量100
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压3.6 V
最小供电/工作电压3.14 V
额定供电电压3.3 V
最大存取时间3 ns
加工封装描述14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
状态ACTIVE
包装形状RECTANGULAR
包装尺寸FLATPACK, LOW PROFILE
表面贴装Yes
端子形式GULL WING
端子间距0.6500 mm
端子涂层NOT SPECIFIED
端子位置QUAD
包装材料PLASTIC/EPOXY
温度等级INDUSTRIAL
内存宽度36
组织2M X 36
存储密度7.55E7 deg
操作模式SYNCHRONOUS
位数2.10E6 words
位数2M
内存IC类型ZBT SRAM
串行并行PARALLEL

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CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33
are 3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back read
or write operations with no wait states. The CY7C1470BV33,
CY7C1472BV33, and CY7C1474BV33 are equipped with the
advanced (NoBL) logic required to enable consecutive read or
write operations with data being transferred on every clock cycle.
This feature dramatically improves the throughput of data in
systems that require frequent read or write transitions. The
CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33 are pin
compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the Byte Write Selects
for
CY7C1470BV33,
BW
a
–BW
b
for
(BW
a
–BW
d
CY7C1472BV33, and BW
a
–BW
h
for CY7C1474BV33) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250 MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte Write capability
Single 3.3V power supply
3.3V/2.5V IO power supply
Fast clock-to-output time
3.0 ns (for 250-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1470BV33, CY7C1472BV33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1474BV33
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG Boundary Scan compatible
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
3.0
500
120
200 MHz
3.0
500
120
167 MHz
3.4
450
120
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 001-15031 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 29, 2008
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