DDR DRAM, 16MX18, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
参数名称 | 属性值 |
厂商名称 | Integrated Silicon Solution ( ISSI ) |
零件包装代码 | BGA |
包装说明 | TBGA, |
针数 | 144 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
访问模式 | MULTI BANK PAGE BURST |
最长访问时间 | 1.875 ns |
其他特性 | AUTO REFRESH |
JESD-30 代码 | R-PBGA-B144 |
长度 | 18.5 mm |
内存密度 | 301989888 bi |
内存集成电路类型 | DDR DRAM |
内存宽度 | 18 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 144 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 16MX18 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE |
座面最大高度 | 1.2 mm |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
宽度 | 11 mm |
IS49NLS18160-18BI | IS49NLS93200-18BL | IS49NLS93200-18BI | IS49NLS18160-18BLI | IS49NLS93200-18B | IS49NLS93200-18BLI | IS49NLS18160-18B | |
---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 16MX18, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 | DDR DRAM, 32MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | DDR DRAM, 32MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 | DDR DRAM, 16MX18, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | DDR DRAM, 32MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 | DDR DRAM, 32MX9, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 | DDR DRAM, 16MX18, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 |
厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TBGA, | TBGA, | TBGA, | TBGA, | TBGA, | TBGA, | TBGA, |
针数 | 144 | 144 | 144 | 144 | 144 | 144 | 144 |
Reach Compliance Code | compli | compliant | compli | compli | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
最长访问时间 | 1.875 ns | 1.875 ns | 1.875 ns | 1.875 ns | 1.875 ns | 1.875 ns | 1.875 ns |
其他特性 | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO REFRESH |
JESD-30 代码 | R-PBGA-B144 | R-PBGA-B144 | R-PBGA-B144 | R-PBGA-B144 | R-PBGA-B144 | R-PBGA-B144 | R-PBGA-B144 |
长度 | 18.5 mm | 18.5 mm | 18.5 mm | 18.5 mm | 18.5 mm | 18.5 mm | 18.5 mm |
内存密度 | 301989888 bi | 301989888 bit | 301989888 bi | 301989888 bi | 301989888 bi | 301989888 bi | 301989888 bi |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 18 | 9 | 9 | 18 | 9 | 9 | 18 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 144 | 144 | 144 | 144 | 144 | 144 | 144 |
字数 | 16777216 words | 33554432 words | 33554432 words | 16777216 words | 33554432 words | 33554432 words | 16777216 words |
字数代码 | 16000000 | 32000000 | 32000000 | 16000000 | 32000000 | 32000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C |
最低工作温度 | -40 °C | - | -40 °C | -40 °C | - | -40 °C | - |
组织 | 16MX18 | 32MX9 | 32MX9 | 16MX18 | 32MX9 | 32MX9 | 16MX18 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TBGA | TBGA | TBGA | TBGA | TBGA | TBGA | TBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm |
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