June1996
NDC632P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode
power field effect transistors are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits
where fast high-side switching, and low in-line power
loss are needed in a very small outline surface
mount package.
Features
-2.7A, -20V. R
DS(ON)
= 0.14
Ω
@ V
GS
= -4.5V
R
DS(ON)
= 0.2
Ω
@ V
GS
= -2.7V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________________
4
3
5
2
6
1
SuperSOT -6
TM
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25°C unless otherwise noted
NDC632P
-20
-8
-2.7
-10
(Note 1a)
(Note 1b)
(Note 1c)
Units
V
V
A
1.6
1
0.8
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDC632P Rev. B1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55
o
C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125
o
C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= - 2.7 A
T
J
= 125 C
V
GS
= -2.7 V, I
D
= - 2.2 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
Forward Transconductance
V
DS
= -10 V, I
D
= - 2.7 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
550
260
75
pF
pF
pF
-10
-4
6
S
o
-20
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
-0.4
-0.3
-0.7
-0.5
0.1
0.145
0.152
-1
-0.8
0.14
0.28
0.2
A
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -5 V,
I
D
= -2.7 A, V
GS
= -4.5 V
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
Ω
10
40
25
17
8.7
1.7
1.8
20
60
40
30
15
ns
ns
ns
ns
nC
nC
nC
NDC632P Rev. B1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-1.3
-0.77
-1.2
A
V
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 125
o
C/W when mounted on a 0.01 in
2
pad of 2oz copper.
c. 156
o
C/W when mounted on a 0.003 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDC632P Rev. B1
Typical Electrical Characteristics
-15
2
V
GS
=-5V -4.5 -4.0
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
-3.5
-12
R
DS(ON)
, NORMALIZED
1.8
V
GS
=-2.5V
-2.7
-3.0
-3.0
-9
1.6
-2.7
-2.5
1.4
-3.5
-4.0
-4.5
-5.0
-6
1.2
-2.0
-3
1
0
0
-1
V
DS
0.8
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
-5
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
D
= -2.7A
1.4
V
GS
=-4.5 V
T J = 125°C
1.5
R
DS(ON)
, NORMALIZED
V
GS
= -4.5V
R
DS(on)
NORMALIZED
,
1.2
25°C
1
1
-55°C
0.5
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0
0
-3
-6
-9
I
D
, DRAIN CURRENT (A)
-12
-15
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
-15
1.2
25°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
=- 5V
-12
T = -55°C
J
V
DS
= V
GS
1.1
I
D
= -250µA
I
D
, DRAIN CURRENT (A)
V
th
, NORMALIZED
1
-9
0.9
-6
0.8
-3
0.7
0
0
-1
V
GS
-2
-3
-4
, GATE TO SOURCE VOLTAGE (V)
-5
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature
.
NDC632P Rev. B1
Typical Electrical Characteristics
(continued)
1.1
15
DRAIN-SOURCE BREAKDOWN VOLTAGE
-I
S
, REVERSE DRAIN CURRENT (A)
I
D
= -250µA
1.05
5
1
V
GS
=0V
BV
DSS
, NORMALIZED
TJ = 125°C
0.1
25°C
-55°C
1
0.01
0.95
0.001
0.9
-50
0.0001
-25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE (°C)
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature
.
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
1000
5
Ciss
, GATE-SOURCE VOLTAGE (V)
500
CAPACITANCE (pF)
4
I
D
= -2.7A
V
DS
= -5V
-10V
-15V
300
200
Coss
3
2
100
f = 1 MHz
V
GS
= 0 V
50
0.1
-V
0.5
1
5
10
15 20
0
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
DS
0.2
-V
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics
.
GS
Crss
1
Figure 10. Gate Charge Characteristics.
-V
DD
t
d(on)
t
on
t
off
t
r
90%
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
V
OUT
10%
V
GS
R
GEN
10%
90%
G
DUT
S
V
IN
10%
50%
50%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDC632P Rev. B1
微控制器 MCU
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