1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Major Ratings and Characteristics
V
(BR)
Unidirectional
V
(BR)
Bidirectional
P
PPM
P
D
I
FSM
(Unidirectional only)
T
j
max.
6.8 V to 540 V
6.8 v to 440 V
1500 W
6.5 W
200 A
175 °C
Case Style 1.5KE
Features
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
Devices for bidirection Applications
For bidirectional types, use C or CA suffix
(e.g. 1.5KE440CA).
Electrical characteristics apply in both directions.
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
Telecommunication.
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave unidirectional only
Maximum instantaneous forward voltage at 100 A for unidirectional only
(3)
Operating junction and storage temperature range
(2)
Symbol
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
Limit
1500
see next table
6.5
200
3.5/5.0
- 55 to + 175
Unit
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for 1.5KE220 (A) & below; V
F
= 5.0 V for 1.5KE250(A) & above
Document Number 88301
03-Jan-06
www.vishay.com
1
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted).
JEDEC
Type
Number
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
General
Semiconductor
Part
Number
(+)
1.5KE6.8
(+)
(+)
Breakdown Voltage
V
(BR)
at I
T
(V)
Min
Max
6.12
7.48
6.45
7.14
6.75
8.25
7.13
7.88
7.38
9.02
7.79
8.61
8.19
10.0
8.65
9.55
9.00
11.0
9.50
10.5
9.90
12.1
10.5
11.6
10.8
13.2
11.4
12.6
11.7
14.3
12.4
13.7
13.5
16.5
14.3
15.8
14.4
17.6
15.2
16.8
16.2
19.8
17.1
18.9
18.0
22.0
19.0
21.0
19.8
24.2
20.9
23.1
21.6
26.4
22.8
25.2
24.3
29.7
25.7
28.4
27.0
33.0
28.5
31.5
29.7
36.3
31.4
34.7
32.4
39.6
34.2
37.8
35.1
42.9
37.1
41.0
38.7
47.3
40.9
45.2
42.3
51.7
44.7
49.4
45.9
56.1
48.5
53.6
50.4
61.8
53.2
58.8
55.8
68.2
58.9
65.1
61.2
74.8
64.6
71.4
67.5
82.5
71.3
78.8
(1)
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
Maximum
Reverse
Leakage at
V
WM
I
D(4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak
Pulse
Current
I
PPM(2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
Maximum
Temp
Coefficient
of V
(BR)
(% / °C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
1.5KE6.8A
1.5KE7.5
(+)
1.5KE7.5A
(+)
1.5KE8.2
(+)
1.5KE8.2A
(+)
1.5KE9.1
(+)
1.5KE9.1A
(+)
1.5KE10
(+)
1.5KE10A
(+)
1.5KE11
(+)
1.5KE11A
(+)
1.5KE12
(+)
1.5KE12A
(+)
1.5KE13
(+)
1.5KE13A
(+)
1.5KE15
(+)
1.5KE15A
(+)
1.5KE16
(+)
1.5KE16A
(+)
1.5KE18
(+)
1.5KE18A
(+)
1.5KE20
(+)
1.5KE20A
(+)
1.5KE22
(+)
1.5KE22A
(+)
1.5KE24
(+)
1.5KE24A
(+)
1.5KE27
(+)
1.5KE27A
(+)
1.5KE30
(+)
1.5KE30A
(+)
1.5KE33
(+)
1.5KE33A
(+)
1.5KE36
(+)
1.5KE36A
(+)
1.5KE39
(+)
1.5KE39A
(+)
1.5KE43
(+)
1.5KE43A
(+)
1.5KE47
(+)
1.5KE47A
(+)
1.5KE51
(+)
1.5KE51A
(+)
1.5KE56
(+)
1.5KE56A
(+)
1.5KE62
(+)
1.5KE62A
(+)
1.5KE68
(+)
1.5KE68A
(+)
1.5KE75
(+)
1.5KE75A
www.vishay.com
2
Document Number 88301
03-Jan-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
Maximum
Reverse
Leakage at
V
WM
I
D(4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak
Pulse
Current
I
PPM(2)
(A)
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
2.19
2.28
2.06
2.15
1.94
2.03
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
Maximum
Temp
Coefficient
of V
(BR)
(% / °C)
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
JEDEC
Type
Number
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
General
Semiconductor
Part
Number
(+)
1.5KE82
(+)
Breakdown Voltage
V
(BR)
at I
T (1)
(V)
Min
Max
73.8
90.2
77.9
86.1
81.9
100.0
86.5
95.5
90.0
110
95.0
105
99.0
121
105
116
108
132
114
126
117
143
124
137
136
165
143
158
144
176
152
168
153
187
162
179
162
198
171
189
180
220
190
210
198
242
209
231
225
275
237
263
270
330
285
315
315
385
333
368
360
440
380
420
396
484
418
462
432
528
456
504
459
561
485
535
486
594
513
567
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
1.5KE82A
(+)
1.5KE91
(+)
1.5KE91A
(+)
1.5KE100
(+)
1.5KE100A
(+)
1.5KE110
(+)
1.5KE 110A
(+)
1.5KE120
(+)
1.5KE120A
(+)
1.5KE130
(+)
1.5KE130A
(+)
1.5KE150
(+)
1.5KE150A
(+)
1.5KE160
(+)
1.5KE160A
(+)
1.5KE170
(+)
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
1.5KE540A
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with V
R
10 volts and less the I
D
limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA,
1.5KE220CA)
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number 88301
03-Jan-06
www.vishay.com
3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Symbol
R
θJL
R
θJA
Limit
20
75
Unit
°C/W
°C/W
Ordering Information
Preferred P/N
1.5KE6.8A-E3/54
Unit Weight (g)
0.968
Preferred Package Code
54
Base Quantity
1400
Delivery Mode
13" Diameter Paper Tape & Reel
Application
• This series of Silicon Transient Suppressors is
used in applications where large voltage tran-
sients can permanently damage voltage-sensitive
components.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry (ref:
R.E.A. specification P.E. 60).
• This Transient Voltage Suppressor diode has a
pulse power rating of 1500 watts for one millisec-
ond. The response time of TVS diode clamping
action is effectively instantaneous (1 x 10
-9
sec-
onds bidirectional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and
other voltage sensitive semiconductors and com-
ponents. TVS diodes can also be used in series or
parallel to increase the peak power ratings.
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
100
P
PPM
- Peak Pulse Power (kW)
75
10
50
1
25
0.1
0.1
µs
0
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
25
50
75
100
125
150
175
200
t
d
- Pulse
Width
(sec.)
T
J
- Initial Temperature (°C)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
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4
Document Number 88301
03-Jan-06
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
200
150
I
PPM
- Peak Pulse Current,
%
I
RSM
Peak Forward Surge Current (A)
tr = 10
µsec.
Peak
Value
I
PPM
100
T
J
= 25
°C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
Half
Value
— IPP
2
I
PPM
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
td
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-repetitive Forward Surge Current
Uni-Directional only
100
10000
Δ
V
C
, Incremental Clamping
Voltage
Unidirectional
Bidirectional
Waveform:
8/20 µs
Impulse
Δ
V
C
=
V
C
-
V
(BR)
20
10
1.5KE200
1.5KE130
1.5KE100
1.5KE75
C
J
, Capacitance, pF
V
R
= 0
1000
2.0
1.0
1.5KE39
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
100
V
R
= Rated
Stand-off
Voltage
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.2
0.1
0.5
1
2
10
20
50
10
5
10
100
500
V
(BR)
, Breakdown
Voltage
(V)
I
PP
, Peak Pulse Current (A)
Figure 4. Typical Junction Capacitance
Figure 7. Incremental Clamping Voltage Curve (Unidirectional)
8.0
100
Δ
V
C
, Incremental Clamping
Voltage
7.0
P
D
, Power Dissipation (W)
Waveform:
10/1000
µs
Impulse
Δ
V
C
=
V
C
-
V
(BR)
20
10
1.5KE200
1.5KE130
1.5KE75
6.0
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
200
L = 0.375” (9.5 mm)
Lead Lengths
1.5KE39
2.0
1.0
1.5KE33
1.5KE6.8
1.5KE9.1
0.2
0.1
0.5
1
2
10
50
T
L
- Lead Temperature (°C)
I
PP
, Peak Pulse Current (A)
Figure 5. Power Derating Curve
Figure 8. Incremental Clamping Voltage Curve (Unidirectional)
Document Number 88301
03-Jan-06
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5
模拟电子
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