R
SS12T THRU SS120T
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 1.0Ampere
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Ultra-thin suface mounted package
Metal silicon junction ,majority carrier conduction
For surface mount applications
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
0.057(1.45 )
0.053(1.35)
SMAFL
0.106(2.7 )
0.102(2.6)
0.171(4.35 )
0.167(4.25)
0.212(5.4)
0.205(5.2)
0.008(0.20)
MAX
5
°
0.042(1.08)
0.040(1.02)
MECHANICAL DATA
0.020(0.5)
Case: SMAFL(DO-214AC) molded plastic body
TerMINals: Solder Plated, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
0.041(1.05)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
SS
12T
20
14
20
SS
13T
30
21
30
SS
14T
40
28
40
SS
16T
60
42
60
1.0
40.0
0.75
100
5
-
0.85
SS
110T
100
71
100
SS
115T
150
105
150
SS
120T
200
140
200
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current (See Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at1.0 A(note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25
°
C
T
A
=100
°
C
T
A
=125
°
C
V
olts
V
olts
V
olts
V
olts
A
mp
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θJA
R
θJL
T
J
T
STG
0.55
0.90
20
-
3
0.95
V
olts
μ
A
m
A
°C/W
°C
°C
115
28.0
-55 to+150
-55 to+150
Notes:
1.Pulse test: 300 s pulse width,1% duty cycle
2. P.C.B. mounted with 0.2 X 0.2"(5.0 X 5.0mm)copper pad areas
JINAN JINGHENG ELECTRONICS CO., LTD.
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WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES SS12T THRU SS120T
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
175
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
PEAK FORWARD SURGE
CURRENT(AMPERES)
40
30
20
10
0
1
At rated T
L
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
LEAD TEMPERATURE (
°
C)
10
100
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT( AMPERES)
10
T
J
=125
°
C
T
J
=150
°
C
PULSE WIDTH=300 S
1% DUTY CYCLE
(mA)
SS12T-SS16T
SS1510T-SS120T
10
INSTANTANEOUS REVERSE CURRENT
T
J
=125
°
C
1
1.0
0.1
T
J
=75
°
C
0.1
T
J
=25
°
C
SS12T-SS16T
SS110T-SS120T
0.01
T
J
=25
°
C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
400
T
J
=25
°
C
f=1.0MH
Z
Vsig=50mVp-p
100
SS12T-SS16T
SS110T-SS120T
10
0.1
1
10
100
JINAN JINGHENG ELECTRONICS CO., LTD.
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