BAV19, BAV20, BAV21
Silicon Epitaxial Planar Diodes
Max. 0.5
High Voltage Switching Diodes
Max. 1.9
Black
Cathode Band
Black
Part No.
Min. 27.5
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
Symbol
V
RRM
V
R
I
F
I
FRM
at t = 1 s
at t = 100
μs
at t = 1
μs
I
FSM
P
tot
T
j
T
stg
Value
120
200
250
100
150
200
250
625
1
3
9
500
175
- 65 to + 175
Unit
V
V
mA
mA
A
mW
O
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 100 µA
Reverse Current
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
at V
R
= 100 V, T
A
= 150
O
C
at V
R
= 150 V, T
A
= 150
O
C
at V
R
= 200 V, T
A
= 150
O
C
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
Diode Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
rr
= 3 mA, R
L
= 100
Ω
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
C
C
O
Symbol
V
(BR)R
Min.
120
200
250
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
100
100
100
1
1.25
5
50
Unit
V
I
R
nA
nA
nA
µA
µA
µA
V
pF
ns
V
F
C
d
t
rr
BAV19, BAV20, BAV21
Rverse voltage vs. reverse current
325
Ta=25 C
Reverse current vs. reverse voltage
50
Reverse current, nA
Ta=25 C
Reverse voltage, V
40
30
20
10
0
300
275
3
5
10
20
30
A
50
100
Reverse current,
55
75
95
115
135
155 175 195
Reverse voltage, V
Forward voltage vs. forward current
Ta=25 C
Reverse current vs. reverse voltage
100
Reverse current, nA
Forward voltage, mV
90
Ta=25 C
80
70
60
50
40
30
20
180
200
220
240
255
450
400
350
300
250
Reverse voltage, V
1
2
5
10
20
A
50
100
Forward current,
Forward voltage vs. forward current
725
700
Forward voltage, mV
Forward voltage vs. forward current
1.4
Ta=25 C
650
600
550
500
450
0.1
Forward voltage, mV
1.3
1.2
1.1
Ta=25 C
Forward voltage, V
1
0.9
0.8
0.7
10
20
50
100
200
500
800
0.2
0.5
1
2
5
10
Forward current, mA
Forward current, mA
BAV19, BAV20, BAV21
Forward voltage vs. ambient temperature
1.3
Forward voltage, mV
Capacitance vs. reverse voltage
Ta=25 C
800
Ta= -40 C
600
Ta=25 C
Capacitance, pF
1.2
1.1
1
0.9
400
200
Ta=80 C
0.8
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
0
2
4
6
8
10
12
14 15
Forward current, mA
Reverse recovery time vs.
reverse recovery current
50
Reverse recovery, nS
Reverse voltage, V
Average rectified current & forward current
vs. ambiebnt temperature
500
400
Current, mA
Fo
rw
ar
dc
40
ur
re
300
200
100
0
nt
s
te a
dy
sta
te,
30
IF=IR=30mA
Rloop=100 Ohms
Aver
ag
mA
e rec
tified
20
1
1.5
2
2.5
3
curr
ent,
mA
100
150
50
Reverse recovery current, mA
Ambient temperature ( C)
Power derating curve
500
Power dissipation, mW
400
DO-35 Pkg
300
200
SOT-23 Pkg
100
0
50
100
150
200
Average temperature ( C)
LED专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
