SMG2318N
Elektronische Bauelemente
1.2 A, 30 V, R
DS(ON)
160 mΩ
Ω
N-Channel Logic Level MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
L
3
SC-59
3
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
Fast switching speed.
Low Gate Charge
K
Top View
1
2
C B
1
2
E
D
F
G
H
J
REF.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printer , PCMCIA cards, cellular and cordless telephones.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25°
C
I
D
T
A
=70°
C
I
DM
I
S
P
D
T
A
=70°
C
Rating
30
±20
1.2
Unit
V
V
A
1
10
1.3
1.3
W
0.8
T
J
, T
STG
-55~150
°
C
A
A
Continuous Source Current (Diode Conduction)
Power Dissipation
1
T
A
=25°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t≦5 sec
R
θJA
250
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 1 of 4
SMG2318N
Elektronische Bauelemente
1.2 A, 30 V, R
DS(ON)
160 mΩ
Ω
N-Channel Logic Level MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
Drain-Source Breakdown Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
V
(BR)DSS
I
GSS
I
DSS
I
D(on)
0.8
30
-
-
-
3.5
-
1.7
-
-
-
-
-
125
230
190
1.8
0.7
2
2.1
-
±100
1
V
V
nA
µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=0, I
D
=250µA
V
DS
=0, V
GS
= ±20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
= 55°C
10
-
160
260
250
-
1.2
S
V
m
A
V
DS
=5V, V
GS
=4.5V
V
GS
=10V, I
D
=1.4A
V
GS
=4.5V, I
D
=1.2A, T
J
= 55°C
V
GS
=4.5V, I
D
=1.2A
V
DS
=5V, I
D
=1.2A
I
S
=1.2A, V
GS
=0
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
Diode Forward Voltage
1
g
fs
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
1.9
0.5
0.9
6
15
15
18
2.7
-
-
15
31
nS
32
42
nC
V
DS
=10V,
V
GS
=4.5V,
I
D
=1.2A,
R
L
=6
V
DS
= 10V,
V
GEN
=10V,
R
L
=50 ,
I
D
=1A
Notes
1 Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 2 of 4
SMG2318N
Elektronische Bauelemente
1.2 A, 30 V, R
DS(ON)
160 mΩ
Ω
N-Channel Logic Level MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 3 of 4
SMG2318N
Elektronische Bauelemente
1.2 A, 30 V, R
DS(ON)
160 mΩ
Ω
N-Channel Logic Level MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Apr-2012 Rev. A
Page 4 of 4
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