AP16N50W-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.4Ω
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, ow
on-resistance and cost-effectiveness.
The TO-3P package is preferred for commercial & industrial
applications with higher power level preclusion than TO-220 device.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+30
16
11
60
250
75
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
40
Units
℃/W
℃/W
1
201402257
Data and specifications subject to change without notice
AP16N50W-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=6.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=500V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=16A
V
DS
=400V
V
GS
=10V
V
DD
=200V
I
D
=8A
R
G
=50Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
8
-
-
-
33
11
9
55
50
141
40
630
20
Max. Units
-
0.4
4
-
20
200
+100
53
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=500V
,
V
GS
=0V
1950 3120
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Pulsed Source Current ( Body Diode )
1
Test Conditions
Min.
-
-
-
-
-
Typ.
-
-
-
495
10
Max. Units
16
60
1.3
-
-
A
A
V
ns
uC
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
S
=16A, V
GS
=0V
I
S
=16A, V
GS
=0V
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Starting T
j
=25
o
C , V
DD
=50V, V
GS
=10V, L=3mH, R
G
=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP16N50W-HF
30
16
T
C
=25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
16 V
12 V
10V
7.0V
V
G
= 6.0 V
T
C
=150 C
o
12
16V
12V
10V
7.0V
V
G
= 6.0V
20
8
10
4
0
0.0
4.0
8.0
12.0
16.0
20.0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
1.1
I
D
=6.5A
V
G
=10V
Normalized BV
DSS
Normalized R
DS(ON)
-50
0
50
100
150
2.0
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature (
o
C)
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.3
T
j
=150
o
C
I
S
(A)
6
T
j
=25
o
C
Normalized V
GS(th)
1.1
4
0.9
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP16N50W-HF
12
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
C
iss
I
D
=16A
V
DS
=400V
1000
8
C (pF)
C
oss
100
6
4
10
2
C
rss
0
0
10
20
30
40
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
10
100us
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
0.1
1ms
1
0.1
0.05
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
