CNY75(G) Series
Vishay
Semiconductors
Optocoupler with Phototransistor Output
Description
The CNY75(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a
coplanar technique,
providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
14827
D
For appl. class I – IV at mains voltage
≤
300 V
D
For appl. class I – III at mains voltage
≤
600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor
system interface.
B
6
C
5
E
4
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
1
2
A (+) C (–)
3
n.c.
95 10805
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
D
VDE 0804
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
Office machines (applied for reinforced isolation
for mains voltage
≤
400 V
RMS
)
apparatus
and
data
Telecommunication
processing
Order Instruction
Ordering Code
CTR Ranking
CNY75A/ CNY75GA
1)
63 to 125%
1)
CNY75B/ CNY75GB
100 to 200%
CNY75C/ CNY75GC
1)
160 to 320%
1)
G = Leadform 10.16 mm; G is not marked on the body
Remarks
Rev. A4, 11–Jan–99
1 (12)
CNY75(G) Series
Vishay
Semiconductors
Features
Approvals:
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI
= 275
D
Thickness through insulation
≥
0.75 mm
General features:
D
BSI:
BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO
(SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory
(UL) 1577 recognized,
file number E-76222
D
VDE
0884, Certificate number 94778
VDE 0884 related features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high
Common Mode Rejection
D
Low temperature coefficient of CTR
D
CTR offered in 3 groups
D
Coupling System A
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
Symbol
V
CBO
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
Symbol
V
IO
P
tot
T
amb
T
stg
T
sd
Value
5
60
3
100
125
Value
90
90
7
50
100
150
125
Value
3.75
250
–55 to +100
–55 to +125
260
Unit
V
mA
A
mW
°
C
Unit
V
V
V
mA
mA
mW
°
C
Unit
kV
mW
°
C
°
C
°
C
t
p
≤
10
m
s
T
amb
≤
25
°
C
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25
°
C
Coupler
Parameter
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
t = 1 min
T
amb
≤
25
°
C
2 mm from case, t
≤
10 s
2 (12)
Rev. A4, 11–Jan–99
CNY75(G) Series
Vishay
Semiconductors
Electrical Characteristics
(T
amb
= 25°C)
Input (Emitter)
Parameter
Forward voltage
Reverse current
Junction capacitance
Test Conditions
I
F
= 50 mA
V
R
= 6 V
V
R
= 0, f = 1 MHz
Symbol
V
F
I
R
C
j
Min.
Typ.
1.25
50
Max.
1.6
10
Unit
V
m
A
pF
Output (Detector)
Parameter
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
I
C
= 100
m
A
I
C
= 1 mA
I
E
= 100
m
A
V
CE
= 20 V, I
F
= 0
Symbol
V
CBO
V
CEO
V
ECO
I
CEO
Min.
90
90
7
Typ.
Max.
Unit
V
V
V
nA
150
Coupler
Parameter
Collector emitter
saturation voltage
Cut-off frequency
Coupling capacitance
Test Conditions
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f = 1 MHz
Symbol
V
CEsat
f
c
C
k
Min.
Typ.
Max.
0.3
Unit
V
kHz
pF
W
110
0.3
Current Transfer Ratio (CTR)
Parameter
I
C
/I
F
Test Conditions
V
CE
= 5 V, I
F
= 1 mA
Type
CNY75(G)A
CNY75(G)B
CNY75(G)C
CNY75(G)A
CNY75(G)B
CNY75(G)C
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
Min.
0.15
0.3
0.6
0.63
1
1.6
Typ.
Max.
Unit
V
CE
= 5 V, I
F
= 10 mA
1.25
2
3.2
Rev. A4, 11–Jan–99
3 (12)
CNY75(G) Series
Vishay
Semiconductors
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
I
si
Value
130
Unit
mA
Output (Detector)
Parameters
Power dissipation
Test Conditions
T
amb
≤
25
°
C
Symbol
P
si
Value
265
Unit
mW
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
V
IOTM
T
si
Value
6
150
Unit
kV
°
C
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Partial discharge test voltage – 100%, t
test
= 1 s
Routine test
Partial discharge test voltage – t
Tr
= 60 s, t
test
= 10 s,
g
g
Lot test (sample test)
(see figure 2)
Insulation resistance
V
IO
= 500 V
V
IO
= 500 V,
T
amb
≤
100
°
C
V
IO
= 500 V,
T
amb
≤
150
°
C
(construction test only)
275
P
tot
– Total Power Dissipation ( mW )
250
225
200
175
150
125
100
75
50
25
0
0
95 10923
Symbol
V
pd
V
IOTM
V
pd
R
IO
R
IO
R
IO
Min.
1.6
6
1.3
10
12
10
11
10
9
Typ.
Max.
Unit
kV
kV
kV
W
W
W
VIOTM
V
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VPd
VIOWM
VIORM
P
si
(mW)
I
si
(mA)
0
t3 ttest t4
t1
tTr = 60 s
t2
tstres
t
25
50
75
100
125
150
175
13930
T
amb
– Ambient Temperature (
°C
)
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4 (12)
Rev. A4, 11–Jan–99
CNY75(G) Series
Vishay
Semiconductors
Switching Characteristics of CNY75(G(A
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
V
S
= 5 V, I
C
= 10 mA, R
L
= 100 (
(see figure 3)
g
)
W
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
( figure 4)
(see g
)
Symbol
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
Typ.
2.0
2.5
2.7
0.3
4.5
3.0
10.0
25.0
Unit
s
s
s
s
s
s
s
s
m
m
m
m
m
m
m
m
Switching Characteristics of CNY75(G)B
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
V
S
= 5 V, I
C
= 10 mA, R
L
= 100 (
(see figure 3)
g
)
W
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
( figure 4)
(see g
)
Symbol
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
Typ.
2.5
3.0
3.7
0.3
5.5
4.0
16.5
20
Unit
s
s
s
s
s
s
s
s
m
m
m
m
m
m
m
m
Switching Characteristics of CNY75(G)C
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
V
S
= 5 V, I
C
= 10 mA, R
L
= 100 (
(see figure 3)
g
)
W
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
( figure 4)
(see g
)
Symbol
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
Typ.
2.8
4.2
4.7
0.3
7.0
5.0
11
37.5
Unit
s
s
s
s
s
s
s
s
m
m
m
m
m
m
m
m
Rev. A4, 11–Jan–99
5 (12)
传感器
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