CNY70
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The CNY70 is a reflective sensor that includes an
infrared emitter and phototransistor in a leaded pack-
age which blocks visible light.
Marking area
E
D
Features
•
•
•
•
•
•
•
•
•
•
Package type: Leaded
Detector type: Phototransistor
Dimensions: L 7 mm x W 7 mm x H 6 mm
e4
Peak operating distance: < 0.5 mm
Operating range: 0 mm to 4.5 mm
Typical output current under test: I
C
= 1 mA
Daylight blocking filter
Emitter wavelength 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity 4000 pcs in tubes,
80 pcs/tube
Top
view
19158
Applications
Optoelectronic scanning and switching devices i.e.,
index sensing, coded disk scanning etc. (optoelec-
tronic encoder assemblies).
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Distance to case 2 mm, t
≤
5 s
Test condition
T
amb
≤
25 °C
Symbol
P
tot
T
amb
T
stg
T
sd
Value
200
- 40 to + 85
- 40 to + 100
260
Unit
mW
°C
°C
°C
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
t
p
≤
10 µs
T
amb
≤
25°C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
5
50
3
100
100
Unit
V
mA
A
mW
°C
Document Number 83751
Rev. 1.6, 04-Sep-06
www.vishay.com
1
CNY70
Vishay Semiconductors
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
T
amb
≤
25 °C
Test condition
Symbol
V
CEO
V
ECO
I
C
P
V
T
j
Value
32
7
50
100
100
Unit
V
V
mA
mW
°C
300
P - Power Dissipation (mW)
Coupled device
200
Phototransistor
100
IR - diode
0
0
95 11071
25
50
75
100
T
amb
- Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Coupler
Parameter
Collector current
Cross talk current
Collector emitter saturation
voltage
1)
2)
Test condition
V
CE
= 5 V, I
F
= 20 mA,
d = 0.3 mm (figure 2)
V
CE
= 5 V, I
F
= 20 mA (figure 1)
I
F
= 20 mA, I
C
= 0.1 mA,
d = 0.3 mm (figure 2)
Symbol
I
C1)
I
CX2)
V
CEsat1)
Min
0.3
Typ.
1.0
Max
Unit
mA
600
0.3
nA
V
Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance
Measured without reflecting medium
Input (Emitter)
Parameter
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
Test condition
I
F
= 50 mA
I
F
= 50 mA, t
P
= 20 ms
I
F
= 100 mA
Method: 63 % encircled energy
Symbol
V
F
I
e
λ
P
Ø
940
1.2
Min
Typ.
1.25
Max
1.6
7.5
Unit
V
mW/sr
nm
mm
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test condition
I
C
= 1 mA
I
E
= 100 µA
V
CE
= 20 V, I
f
= 0, E = 0
Symbol
V
CEO
V
ECO
I
CEO
Min
32
5
200
Typ.
Max
Unit
V
V
nA
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2
Document Number 83751
Rev. 1.6, 04-Sep-06
CNY70
Vishay Semiconductors
Reflecting medium
(Kodak neutral test card)
~
~
~
d
~
~
~
Detector
Emitter
A
C
E
C
95 10893
Figure 2. Test Condition
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
1000
I
C
- Collector Current (mA)
10
Kodak neutral card
(white side)
d = 0.3 mm
V
CE
= 5
V
I
F
- Forward Current (mA)
100
1
10
0.1
1
0.01
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
0.001
0.1
95 11065
1
10
100
V
F
- Forward
Voltage
(V)
I
F
- Forward Current (mA)
Figure 3. Forward Current vs. Forward Voltage
Figure 5. Collector Current vs. Forward Current
CTR
rel
- Relative Current Transfer Ratio
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 -10 0 10 20 30 40 50 60 70
80
T
amb
- Ambient Temperature (°C)
10
I
C
- Collector Current (mA)
V
=5
V
CE
I
F
= 20 mA
d = 0.3 mm
Kodak neutral card
(white side)
d = 0.3 mm
I
F
= 50 mA
20 mA
10 mA
1
0.1
5 mA
2 mA
0.01
1 mA
0.001
0.1
1
10
100
96 11913
95 11066
V
CE
- Collector Emitter
Voltage
(V)
Figure 4. Relative Current Transfer Ratio vs.
Ambient Temperature
Document Number 83751
Rev. 1.6, 04-Sep-06
Figure 6. Collector Current vs. Collector Emitter Voltage
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3
CNY70
Vishay Semiconductors
100
10
I
C
- Collector Current (mA)
CTR - Current Transfer Ratio (%)
Kodak neutral card
(white side)
d = 0.3 mm
V
CE
= 5
V
10
1
d
1
0.1
V
CE
= 5
V
I
F
= 20 mA
0.001
0
2
4
6
8
10
0.1
0.1
96 11914
1
10
100
I
F
- Forward Current (mA)
95 11069
d - Distance (mm)
Figure 7. Current Transfer Ratio vs. Forward Current
Figure 9. Collector Current vs. Distance
0°
10
CTR - Current Transfer Ratio (%)
I
F
=50 mA
10°
20°
30°
I
erel
- Relative Radiant Intensity
I
crel
- Relative Collector Current
1 mA
1
5 mA
2 mA
Kodak neutral card
(white side)
d = 0.3 mm
0.1
0.1
20 mA
10 mA
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
96 12001
100
1
10
V
CE
- Collector Emitter
Voltage
(V)
0.6
95 11063
0.4
0.2
0
0.2
0.4
0.6
Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage
Figure 10. Relative Radiant Intensity/Collector Current vs.
Angular Displacement
1.0
I
Crel
- Relative Collector Current
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
96 11915
d = 5 mm
4 mm
3 mm
2 mm
1 mm
0
V
CE
= 5
V
I
F
= 20 mA
E
1.5
D
d
E
D
0
s
5 mm
10 mm
0
s
5 mm
10 mm
1
2
3
4
5
6
7
8
9
10
11
s - Displacement (mm)
Figure 11. Relative Collector Current vs. Displacement
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4
Document Number 83751
Rev. 1.6, 04-Sep-06
CNY70
Vishay Semiconductors
Package Dimensions
95 11345
Tube Dimensions
20291
Document Number 83751
Rev. 1.6, 04-Sep-06
www.vishay.com
5
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