CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
FEATURES
• Rated recurring peak voltage (repetitive)
V
IORM
= 1000 V
RMS
64
65
• Thickness through insulation
≥
3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index:
CTI
≥
200
• Lead (Pb)-free component
4
Top
View
A
C
66
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
V
D E
C
17187
E
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage
≤
300 V
- for appl. class I - IV at mains voltage
≤
600 V
- for appl. class I - III at mains voltage
≤
1000 V
according to DIN EN 60747-5-5 (VDE 0884)
DESCRIPTION
The CNY64/CNY65/CNY66 consist of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
•
DIN EN 60747-5-5 (VDE 0884)
Optocoupler for electrical safety requirements
•
IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains
voltage
≤
400 V
RMS
)
•
VDE 0804
Telecommunication apparatus and data processing
•
IEC 60065
Safety for mains-operated electronic and related
household apparatus
•
VDE 0700/IEC 60335
Household equipment
•
VDE 0160
Electronic equipment for electrical power installation
•
VDE 0750/IEC 60601
Medical equipment
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K, double
protection
• DIN EN 60747-5-5 (VDE 0884)
• VDE related features:
- rated impulse voltage (transient overvoltage),
V
IOTM
= 8 kV peak
- isolation test voltage (partial discharge test voltage),
V
pd
= 2.8 kV peak
ORDER INFORMATION
PART
CNY64
CNY65
CNY66
CNY64A
CNY65A
CNY64B
CNY65B
REMARKS
CTR 50 to 300 %, high isolation distance, 4 pin
CTR 50 to 300 %, high isolation distance, 4 pin
CTR 50 to 300 %, high isolation distance, 4 pin
CTR 63 to 125 %, high isolation distance, 4 pin
CTR 63 to 125 %, high isolation distance, 4 pin
CTR 100 to 200 %, high isolation distance, 4 pin
CTR 100 to 200 %, high isolation distance, 4 pin
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236
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Very High Isolation Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
AC Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case,
≤
10 s
t = 1 min
V
ISO
P
tot
T
amb
T
stg
T
sld
8.2
250
- 55 to + 85
- 55 to + 100
260
kV
mW
°C
°C
°C
t
P
/T = 0.5, t
P
≤
10 ms
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
32
7
50
100
130
100
V
V
mA
mA
mW
°C
t
P
≤
10 µs
V
R
I
F
I
FSM
P
diss
T
j
5
75
1.5
120
100
V
mA
A
mW
°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
110
0.3
0.3
V
kHz
pF
I
C
= 1 mA
I
E
= 100 µA
V
CE
= 20 V, I
f
= 0 A
V
CEO
V
ECO
I
CEO
32
7
200
V
V
nA
I
F
= 50 mA
V
R
= 0, f = 1 MHz
V
F
C
j
1.25
50
1.6
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
CNY64A
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
CNY65A
CNY64B
CNY65B
SYMBOL
CTR
CTR
CTR
CTR
CTR
MIN.
50
63
63
100
100
TYP.
MAX.
300
125
125
200
200
UNIT
%
%
%
%
%
Document Number: 83540
Rev. 1.7, 20-Oct-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
237
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
V
IOTM
T
si
10
150
kV
°C
P
diss
250
mW
I
F
120
mA
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V, T
amb
= 25 °C
Insulation resistance
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
SYMBOL
V
pd
V
pd
R
IO
R
IO
R
IO
MIN.
2.8
2.2
10
12
10
11
10
9
TYP.
MAX.
UNIT
kV
kV
Ω
Ω
Ω
V
IOTM
250
225
200
175
150
125
100
75
50
25
0
0
95 10922
P
si
(mW)
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
Pd
V
IOWM
V
IORM
= 1 to 10 s
=1s
= 10 s
= 12 s
I
si
(mA)
0
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
25
50
75 100 125 150 175 200
T
amb
(°C)
Fig. 1 - Derating Diagram
13930
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
TEST CONDITION
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see figure 3)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 4)
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
2.6
2.4
2.7
0.3
5.0
3.0
25.0
42.5
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
www.vishay.com
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83540
Rev. 1.7, 20-Oct-08
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Very High Isolation Voltage
I
F
0
t
p
t
0
I
F
I
F
+5
V
I
C
= 5 mA; adjusted through
input amplitude
I
C
100
%
90
%
R
G
= 50
t
p
= 0.01
T
t
p
= 50
µs
Channel I
Channel II
50
100
Oscilloscope
R
L
1 M
C
L
20 pF
10
%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
95 10900
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 5 - Switching Times
I
F
0
I
F
= 10 mA
+5
V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50
µs
Channel I
Channel II
50
Ω
1 kΩ
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
95 10843
Fig. 4 - Test Circuit, Saturated Operation
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
P
tot
- Total Power Dissipation (mW)
200
160
120
Coupled device
80
40
0
0
25
50
75
100
Phototransistor
IR-diode
1000
I
F
- Forward Current (mA)
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
95 11003
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Document Number: 83540
Rev. 1.7, 20-Oct-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
239
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
CTR
rel
- Relative Current Transfer Ratio
1.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70
80
100
I
C
- Collector Current (mA)
1.4
V
CE
= 5
V
I
F
= 10 mA
I
F
= 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
95 11013
1
10
100
96 11911
T
amb
- Ambient Temperature (°C)
V
CE
- Collector Emitter
Voltage
(V)
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 11 - Collector Current vs. Collector Emitter Voltage
1000
1.0
I
CEO
- Collector Dark Current,
with
open Base (nA)
V
CEsat
- Collector Emitter
Saturation
Voltage
(V)
V
CE
= 20
V
I
F
= 0
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
96 11912
CTR = 50
%
10
20
%
10
%
10
100
1
0 10 20 30 40 50 60 70
80
90 100
96 12000
T
amb
- Ambient Temperature (°C)
I
C
- Collector Current (mA)
Fig. 9 - Collector Dark Current vs. Ambient Temperature
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
V
CE
= 5
V
10
CTR - Current Transfer Ratio (%)
100
1000
V
CE
= 5
V
100
I
C
- Collector Current (mA)
1
10
0.1
0.01
0.1
95 11012
1
0.1
1
10
100
1
10
100
I
F
- Forward Current (mA)
95 11015
I
F
- Forward Current (mA)
Fig. 10 - Collector Current vs. Forward Current
Fig. 13 - Current Transfer Ratio vs. Forward Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83540
Rev. 1.7, 20-Oct-08
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