CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection
Features
• Breakdown Voltage, 5300 V
RMS
• No Base Terminal Connection for Improved Com-
mon Mode Interface Immunity
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
18216
A
C
NC
1
2
3
6 NC
5 C
4 E
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO
Order Information
Part
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1X006
CNY17F-1X007
CNY17F-1X009
CNY17F-2X006
CNY17F-2X007
CNY17F-2X009
CNY17F-3X006
CNY17F-3X007
CNY17F-3X009
CNY17F-4X006
CNY17F-4X007
CNY17F-4X009
Remarks
CTR 40 - 80 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
CTR 40 - 80 %, DIP-6 400 mil (option 6)
CTR 40 - 80 %, SMD-6 (option 7)
CTR 40 - 80 %, SMD-6 (option 9)
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CTR 63 - 125 %, SMD-6 (option 7)
CTR 63 - 125 %, SMD-6 (option 9)
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CTR 100 - 200 %, SMD-6 (option 7)
CTR 100 - 200 %, SMD-6 (option 9)
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CTR 160 - 320 %, SMD-6 (option 7)
CTR 160 - 320 %, SMD-6 (option 9)
Description
The CNY17F is an optocoupler consisting af a Gal-
lium Arsenide infrared emitting diode optically cou-
pled to a silicon planar phototransistor detector in a
plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of
the F type is not conected, resulting in a substantially
improved common-mode interference immunity.
For additional information on the available options refer to
Option Information.
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
1
CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter breakdown
voltage
Collector current
t
≤
1.0 ms
Total power dissipation
Test condition
Symbol
BV
CEO
I
C
I
C
P
diss
Value
70
50
100
150
Unit
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
V
IO
= 500 V
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
175
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
mm
mm
mm
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Thermal resistance
Test condition
I
F
= 60 mA
I
R
= 10
µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
V
BR
I
R
C
O
R
th
6.0
0.01
25
750
10
Min
Typ.
1.25
Max
1.65
Unit
V
V
µA
pF
K/W
Output
Parameter
Collector-emitter capacitance
Base - collector capacitance
Emitter - base capacitance
Thermal resistance
Test condition
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
Symbol
C
CE
C
BC
C
EB
R
th
Min
Typ.
5.2
6.5
7.5
500
Max
Unit
pF
pF
pF
K/W
Coupler
Parameter
Saturation voltage, collector-
emitter
Coupling capacitance
Collector-emitter leakage
current
V
CE
= 10 V
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Test condition
I
F
= 10 mA, I
C
= 2.5 mA
Part
Symbol
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
Min
Typ.
0.25
0.6
2.0
2.0
5.0
5.0
50
50
100
100
Max
0.4
Unit
V
pF
nA
nA
nA
nA
Current Transfer Ratio
Current Transfer Ratio I
C
/I
F
at V
CE
= 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Current Transfer Ratio
Test condition
I
F
= 10 mA
Part
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
I
F
= 1.0 mA
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Min
40
63
100
160
13
22
34
56
30
45
70
90
Typ.
Max
80
125
200
320
Unit
%
%
%
%
%
%
%
%
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
3
CNY17F
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
Test condition
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
Test condition
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Rise time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Turn-off time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Fall time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Symbol
t
on
t
r
t
off
t
f
f
CO
Min
Typ.
3.0
2.0
2.3
2.0
250
Max
Unit
µs
µs
µs
µs
kHz
Switching operation (with saturation)
Parameter
Turn-on time
Part
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
Symbol
t
on
t
on
t
on
t
on
t
r
t
r
t
r
t
r
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
Min
Typ.
3.0
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
23
23
25
11
14
14
15
Max
Unit
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
I
F
R
L
=75
Ω
I
C
V
CC
=5 V
I
F
1 KΩ
V
CC
=5 V
45
Ω
47
Ω
icny17f_01
icny17f_02
Figure 1. Linear Operation ( without Saturation)
Figure 2. Switching Operation (with Saturation)
www.vishay.com
4
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
(TA = –25°C, VCE = 5.0 V)
IC/IF = f (IF)
(TA = 50°C, VCE = 5.0 V)
1
2
3
4
1
2
3
4
icny17f_03
icny17f_06
A
Figure 3. Current Transfer Ratio vs. Diode Current
Figure 6. Current Transfer Ratio vs. Diode Current
(TA = 0°C, VCE = 5.0 V)
IC/IF = f (IF)
(TA = 75°C, VCE = 5.0 V)
1
2
3
4
1
2
3
4
icny17f_04
icny17f_07
Figure 4. Current Transfer Ratio vs. Diode Current
Figure 7. Current Transfer Ratio vs. Diode Current
(TA = 25°C, VCE = 5.0 V)
IC/IF = f (IF)
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
4
3
1
2
3
4
2
1
icny17f_05
icny17f_08
A
Figure 5. Current Transfer Ratio vs. Diode Current
Figure 8. Current Transfer Ratio (CTR) vs. Temperature
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
