CMT10N40
P
OWER
MOSFET
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 10A, L = 6mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.7
62.5
260
℃
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
10
40
±20
±40
125
1.0
-55 to 150
300
V
V
W
W/℃
℃
mJ
Unit
A
2001/11/07
Draft
Champion Microelectronic Corporation
Page 1
CMT10N40
P
OWER
MOSFET
ORDERING INFORMATION
Part Number
CMT10N40N220
Package
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT10N40
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 400 V, V
GS
= 0 V)
(V
DS
= 400 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 5.0A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 5.0 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 5.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 10.0 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
**
250
1.5
V
ns
ns
L
S
7.5
nH
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 200 V, I
D
= 10.0 A,
V
GS
= 10 V,
R
G
= 10Ω) *
(V
DS
= 320 V, I
D
= 10.0 A,
V
GS
= 10 V)*
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
5.8
1570
230
55
25
37
75
31
46
10
23
4.5
63
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
R
DS(on)
V
DS(on)
0.55
6.0
Ω
V
V
GS(th)
2.0
4.0
V
I
GSSR
100
nA
I
GSSF
I
DSS
25
250
100
nA
μA
Symbol
V
(BR)DSS
Min
400
Typ
Max
Units
V
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2001/11/07
Draft
Champion Microelectronic Corporation
Page 2
CMT10N40
P
OWER
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
2001/11/07
Draft
Champion Microelectronic Corporation
Page 3
CMT10N40
P
OWER
MOSFET
PACKAGE DIMENSION
TO-220
D
A
c1
φ
F
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
e1
e
b
A1
c
Side View
φ
L1
Front View
2001/11/07
Draft
Champion Microelectronic Corporation
Page 4
CMT10N40
P
OWER
MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
2001/11/07
Draft
Champion Microelectronic Corporation
Page 5
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