AP16N50I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
0.4Ω
16A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
500
+20
16
11
60
52
0.42
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2.4
65
Units
℃/W
℃/W
1
200912163
Data and specifications subject to change without notice
AP16N50I-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=6.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=500V, V
GS
=0V
V
GS
=+20V
I
D
=16A
V
DS
=400V
V
GS
=10V
V
DD
=200V
I
D
=8A
R
G
=50Ω,V
GS
=10V
R
D
=25Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
8
-
-
33
11
9
55
50
141
40
630
20
Max. Units
-
0.4
4
-
25
+100
53
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1950 3120
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=16A, V
GS
=0V
I
S
=16A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
495
10
Max. Units
1.3
-
-
V
ns
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP16N50I-HF
30
16
T
C
=25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
16V
12V
10V
7.0V
V
G
=6.0V
T
C
=150
o
C
12
16V
12V
10V
7.0V
V
G
=6.0V
20
8
10
4
0
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
8.0
12.0
16.0
20.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=6.5A
V
G
=10V
Normalized BV
DSS
(V)
1.1
2.0
1
Normalized R
DS(ON)
-50
0
50
100
150
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C)
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.3
T
j
=150
o
C
I
S
(A)
6
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.1
4
0.9
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP16N50I-HF
12
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=16A
V
DS
=400V
8
C
iss
1000
C (pF)
C
oss
100
6
4
10
2
C
rss
0
0
10
20
30
40
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Normalized Thermal Response (R
thjc
)
0.2
0.1
0.1
10
100us
1ms
10ms
100ms
1s
DC
0.05
I
D
(A)
0.02
1
0.01
P
DM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0
T
C
=25 C
Single Pulse
0.1
1
10
100
o
0
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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