NDD60N900U1
N-Channel Power MOSFET
600 V, 900 mW
Features
•
100% Avalanche Tested
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
Power Dissipation
– R
qJC
Pulsed Drain
Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
EAS
dv/dt
T
L
Symbol
V
DSS
V
GS
I
D
Value
600
±25
5.7
3.6
74
20
−55
to
+150
5.7
33
15
260
W
A
°C
A
mJ
V/ns
°C
1
Unit
V
V
A
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V
(BR)DSS
600 V
R
DS(ON)
MAX
900 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
t
p
= 10
ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
D
= 2 A)
Peak Diode Recovery (Note 1)
Lead Temperature for Soldering Leads
4
1 2
3
IPAK
CASE 369D
STYLE 2
4
2
3
DPAK
CASE 369C
STYLE 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
SD
< 5.7 A, di/dt
≤
400 A/ms, V
peak
< V
(BR)DSS
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDD60N900U1
Symbol
R
qJC
R
qJA
Value
1.7
47
99
95
Unit
°C/W
°C/W
3
IPAK
CASE 369AD
STYLE 2
12
Junction−to−Ambient Steady State
(Note 3)
NDD60N900U1
(Note 2)
NDD60N900U1−1
(Note 2)
NDD60N900U1−35
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 0
1
Publication Order Number:
NDD60N900U1/D
NDD60N900U1
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance, energy
related (Note 6)
Effective output capacitance, time
related (Note 7)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
rr
V
GS
= 0 V, V
DD
= 30 V
I
S
= 5.9 A, d
i
/d
t
= 100 A/ms
T
J
= 25°C
T
J
= 100°C
V
DD
= 300 V, I
D
= 5.9 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 300 V, I
D
= 5.9 A, V
GS
= 10 V
V
GS
= 0 V, V
DS
= 0 to 480 V
I
D
= constant, V
GS
= 0 V,
V
DS
= 0 to 480 V
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
360
23
1.1
17
57
12
2.5
5.8
5.4
5
7
9
17
6
0.88
0.80
270
130
140
1.8
mC
ns
1.3
V
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250
mA
Reference to 25°C, I
D
= 250
mA
V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 15 V, I
D
= 2.5 A
2
3.2
7.2
820
4.3
900
4
V
mV/°C
mW
S
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 1 mA
600
550
1
100
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
I
S
= 5.7 A, V
GS
= 0 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
6. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
7. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
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2
NDD60N900U1
MARKING DIAGRAMS
4
Drain
YWW
60N
900U1G
4
Drain
YWW
60N
900U1G
4
Drain
1 2 3
Gate Drain Source
IPAK
Y
WW
G
2
1 Drain 3
Gate Source
DPAK
= Year
= Work Week
= Pb−Free Package
1
Gate
ORDERING INFORMATION
Device
NDD60N900U1−1G
NDD60N900U1−35G
NDD60N900U1T4G
Package
IPAK
(Pb-Free, Halogen-Free)
IPAK
(Pb-Free, Halogen-Free)
DPAK
(Pb-Free, Halogen-Free)
Shipping
†
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
YWW
60N
900U1G
3
2 Source
Drain
IPAK
NDD60N900U1
TYPICAL CHARACTERISTICS
10
9
I
D
, DRAIN CURRENT (A)
8
7
6
5
4
3
2
1
0
0
5
10
15
20
V
GS
= 4.5 V
V
GS
= 4.0 V
25
30
V
GS
= 5.0 V
V
GS
= 10 V to 6.5 V
I
D
, DRAIN CURRENT (A)
V
GS
= 6.0 V
V
GS
= 5.5 V
10
9
8
7
6
5
4
3
2
1
0
T
J
= 150°C
T
J
=
−55°C
2
3
4
5
6
7
8
9
10
V
DS
= 15 V
T
J
= 25°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T
J
= 25°C
I
D
= 2.5 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 10 V
4
5
6
7
8
9
10
0
2
4
6
8
10
V
GS
, GATE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50
I
D
= 2.5 A
V
GS
= 10 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
−50
−25
0
25
50
75
100
125
150
I
D
= 250
mA
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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4
NDD60N900U1
TYPICAL CHARACTERISTICS
V
GS(th)
, NORMALIZED THRESHOLD VOLTAGE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
−50
−25
0
25
50
75
100
125
150
1
0
100
200
300
400
500
600
I
D
= 250
mA
I
DSS
, LEAKAGE (nA)
1000
10,000
T
J
= 150°C
T
J
= 125°C
100
T
J
= 100°C
10
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Threshold Voltage Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10,000
C
OSS
C, CAPACITANCE (pF)
1000
C
ISS
C
RSS
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
12
11
10
9
8
7
6
5
4
3
2
1
0
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
Q
T
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
350
300
V
DS
Q
GS
Q
GD
V
GS
250
200
150
V
DS
= 300 V
T
J
= 25°C
I
D
= 5.9 A
0
2
4
6
8
10
12
14
100
50
0
10
1
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
GS
= 10 V
V
DD
= 300 V
I
D
= 5.9 A
t, TIME (ns)
100
t
d(off)
t
r
t
f
10
t
d(on)
100
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 100°C
T
J
= 125°C
10
T
J
= 150°C
1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
T
J
= 25°C T
J
=
−55°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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