Low Profile SMD Bridge Rectifiers
Comchip
SMD Diode Specialist
CGRHD101-G Thru. CGRHD107-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 A
RoHS Device
Features
- Surge overload ratings to 35 amperes peak.
-1.0A rating in low profile surface mount min-dip
bridge save space on printed circuit board.
- Ideal for automated replacement.
- Glass passivated chip junctions.
- UL recognized file # E321971
0.228(5.80)
0.213(5.40)
0.035 (0.90)
0.019 (0.50)
MDLS
0.063(1.60)
0.055(1.40)
~
~
0.004(0.10)
max.
+
0.106 (2.70)
0.090 (2.30)
-
0.012(0.30)
0.004(0.10)
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic low profile SMD mini-dip(MDLS),
Bridge case
-Terminals: solderable per MIL-STD-750,method 2026.
-Polarity: Marking on body.
-Mounting Position: Any
-weight: 0.10 grams (approx.).
0.043(1.10)
0.020(0.50)
0.284(7.20)
0.260(6.60)
0.197(5.00)
0.181(4.60)
Dimensions in inches and (millimeter)
Maximum Rating And Electrical Characteristics
Rating at TA=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum Continuous Reverse Voltage
Maximum Forward Rectified Current
Peak Forward Surge Current
8.3mS single half sine-wave, superimposed on
rate load(JEDEC Method)
Symbol
V
RRM
V
RMS
V
R
I
(AV)
CGRHD CGRHD CGRHD CGRHD CGRHD CGRHD CGRHD
103-G
101-G
102-G
104-G
105-G
106-G
107-G
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Unit
V
V
V
A
I
FSM
V
F
V
F
I
R
I
R
R
θJA
R
θJL
C
J
T
J
T
STG
35
1.0
1.1
5.0
150
62.5
25.0
25
-55 to +150
-65 to +175
A
at I
F
=0.5A
Maximum Forward Voltage
Maximum Reverse Current
Typical Thermal Resistance
at I
F
=1.0A
@V
R
=V
RRM
T
J
=25°C
@V
R
=V
RRM
T
J
=100°C
Junction to ambient,note 1
Junction to lead
V
μA
°C/W
pF
°C
°C
Typical Junction Capacitance (Per leg, note 2)
Operating Temperature Range
Storage Temperature Range
Notes: 1. Thermal resistance from Junction to Ambient and from junctionto lead mounted on glass epoxy P.C.B 0.8*0.8(20*20mm) copper pad.
2. Measure at 1.0 MH
Z
and applied reverse voltage of 4.0 votls.
REV:B
QW-BBR77
Page 1
Comchip Technology CO., LTD.
Low Profile SMD Bridge Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CGRHD101-G thru CGRHD107-G)
Fig.1 - Forward Current Derating Curve
Average Forward Output Current , I
F(AV)
(A)
1.0
Fig.2 - Maximum Non-Repetitive Peak
Forwafd Surge Current
Peak Forward Surge Current, I
FSM
(A)
single half-sine wave
(JEDEC Method)
60 Hz resistive
or inductive load
35
30
25
20
15
10
5
0
1
1 cycle
10
0.8
0.6
0.4
0.2
0.1
0
20
40
60
80
100 120 140 160
Ambient Temperature, T
A
(°C)
Number of Cycles at 60Hz
Fig.3 - Typical Instantaneour Forward
Characteristics (Per Leg)
Instantaneous Forward Current, ( A )
Instantaneous Reverse Current, (µA)
10
T
J
=150°C
Fig.4 - Typical Reverse Characteristics
(Per Leg)
1000
100
T
J
=125°C
1.0
T
J
=125°C
10
1.0
T
J
=100°C
0.1
T
J
=25°C
0.1
T
J
=25°C
Pulse Width=300μS
1% duty cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0
20
40
60
80
Instantaneous Forward Voltage, (V)
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Typical Junction Capacitance
(Per Leg)
100
TJ=25°C
f=1.0MH
Z
Vsig=50mVp-p
Junction Capacitance, C
J
( pF )
10
0.01
1
10
100
Reverse Voltage, V
R
(V)
REV:B
Pe
100
40
100
QW-BBR77
Page 2
Comchip Technology CO., LTD.
stm32/stm8
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