REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
RICK OFFICER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
11-01-11
REVISION LEVEL
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
MICROCIRCUIT, LINEAR, PRECISION LOW
NOISE, LOW INPUT BIAS CURRENT
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
A
CAGE CODE
AMSC N/A
67268
SHEET
1 OF 14
5962-09223
DSCC FORM 2233
APR 97
5962-E300-10
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
L
09223
01
V
H
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
AD8671
Circuit function
Precision low noise, low input bias current
operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
H
Descriptive designator
GDFP1-F10
Terminals
10
Package style
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-09223
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage (+V
S
to -V
S
) ..................................................................... 36 V
Input voltage (V
IN
) ...................................................................................
Differential input voltage ..........................................................................
Output short circuit duration .....................................................................
Power dissipation (P
D
) .............................................................................
Junction temperature (T
J
) ........................................................................
Lead temperature (soldering, 10 seconds) ...............................................
Storage temperature range ......................................................................
Thermal resistance, junction-to-case (
JC
) ..............................................
-V
S
to +V
S
0.7
V
Indefinite
2/
+150C
+300C
-65C to +150C
66C/W
Thermal resistance, junction-to-ambient (
JA
) ......................................... 370C/W 3/
1.4 Recommended operating conditions.
Supply voltage (V
S
) :
V
S
dual supply mode ..........................................................................
5
V to
15
V
0 V / +V
S
single supply mode ............................................................... 0 V / +10 V to 0 V / +30 V
Ambient operating temperature range (T
A
) .............................................. -55C to +125C
1.4.1 Operating performance characteristics: 4/
Common mode input capacitance (C
INCM
) .............................................. 6.25 pF
Differential mode input capacitance (C
INDM
) ........................................... 7.5 pF
Input resistance (R
IN
) .............................................................................. 3.5 G
Differential mode input resistance (R
INDM
) .............................................. 15 M
Settling time (t
S
):
V
S
=
5
V:
To 0.1%, 4 V step, gain (G) = 1 ........................................................
To 0.01%, 4 V step, gain (G) = 1 ......................................................
V
S
=
15
V:
To 0.1%, 10 V step, gain (G) = 1 ......................................................
To 0.01%, 10 V step, gain (G) = 1 ....................................................
1.4
s
5.1
s
2.2
s
6.3
s
Hz
Current noise density (i
n
) (f = 1 kHz) ........................................................ 0.3 pA /
Output current (V
S
=
5
V) .......................................................................
10
mA
Output current (V
S
=
15
V) .....................................................................
20
mA
Short circuit current (V
S
=
15
V) .............................................................
30
mA
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Absolute maximum power dissipation is limited by ensuring in the application of the absolute maximum junction temperature
(T
J
) of 150C is not exceed. Actual application power dissipation (including what is required for output drive current) and
3/
4/
case to ambient thermal resistance (
CA
) will determine the maximum T
J
as described in section 6.7.1.
Measurement taken under absolute worst case conditions of still air chamber while mounted above the printed circuit board
(PCB) to minimize PCB mounting heat sinking effects.
Unless otherwise specified, V
S
=
5
V to
15
V, V
CM
= 0.0 V, T
A
= +25C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-09223
SHEET
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ............. 50 krads(Si) 5/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
______
5/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-09223
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55C
T
A
+125C
V
S
=
5
V, V
CM
= 0 V
unless otherwise specified
Group A
subgroups
Device
type
Min
Limits
Max
Unit
Input characteristics section
Offset voltage
V
OS
1
2,3
M,D,P,L
Offset voltage drift
Input bias current
V
OS
/
T
I
B
3/
1
2,3
1
2,3
M,D,P,L
Input offset current
I
OS
1
1
2,3
M,D,P,L
Input voltage range
IVR
1
1,3
2
M,D,P,L
Common mode rejection ratio
CMRR
V
CM
= IVR max to IVR min
M,D,P,L
Large signal voltage gain
A
VO
V
O
= -3 V to +3 V,
R
L
= 2 k
See footnotes at end of table.
M,D,P,L
1
1,2,3
1
1,2,3
1
01
01
01
01
01
01
-12
-40
-200
-12
-40
-40
-2.5
-2.25
-2.5
100
100
1000
1000
V/mV
01
-75
-125
-200
+75
+125
+200
0.5
+12
+40
200
+12
+40
+40
+2.5
+2.25
+2.5
dB
V
nA
V/C
nA
V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-09223
SHEET
5
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