AP9T15GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Capable of 2.5V Gate Drive
▼
Single Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
20V
50mΩ
12.5A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
3
Rating
20
+16
12.5
8
60
12.5
0.1
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10
62.5
110
Units
℃/W
℃/W
℃/W
1
201009303
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP9T15GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=10A
V
DS
=20V, V
GS
=0V
V
GS
=+16V, V
DS
=0V
I
D
=10A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=10A
R
G
=3.3Ω,V
GS
=5V
R
D
=1Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Min.
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
10
-
-
-
5
1
2
8
55
10
3
360
70
50
1.67
Max. Units
-
50
80
1.5
-
1
250
+100
8
-
-
-
-
-
-
580
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=16V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
17
9
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T15GH/J-HF
50
40
T
C
=25
o
C
40
T
C
= 150
o
C
I
D
, Drain Current (A)
5.0V
4.5V
30
I
D
, Drain Current (A)
5.0V
4.5V
30
3.5V
20
20
3.5V
2.5V
10
10
2.5V
V
G
=1.5V
V
G
=1.5V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
43
I
D
= 5.2 A
T
C
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=6A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
41
1.4
39
1.2
37
1.0
35
0.8
33
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
Normalized V
GS(th)
(V)
1.5
6
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
1.0
0.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T15GH/J-HF
f=1.0MHz
14
1000
12
I
D
=10A
V
DS
=10V
V
DS
=12V
V
DS
=16V
C (pF)
100
V
GS
, Gate to Source Voltage (V)
C
iss
10
8
6
C
oss
C
rss
4
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Operation in this
area limited by
R
DS(ON)
Duty factor = 0.5
100us
10
0.2
I
D
(A)
0.1
1ms
10ms
100ms
DC
T
c
=25
o
C
Single Pulse
0.1
0.1
1
10
100
0.1
0.05
1
P
DM
0.02
t
0.01
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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