BRT21/ 22/ 23
Vishay Semiconductors
Optocoupler, Phototriac Output, Zero Crossing
Features
•
•
•
•
High Input Sensitivity I
FT
= 1.0 mA
I
TRMS
= 300 mA
High Static dv/dt 10,000 V/µs
Electrically Insulated between Input and
Output circuit
• Microcomputer compatible
• Trigger Current
- (I
FT
< 1.2 mA) BRT22F, BRT23F,
- (I
FT
< 2 mA) BRT21H, BRT22H, BRT23H
- (I
FT
< 3 mA) BRT21M, BRT22M, BRT23M
•
•
•
•
•
Available Surface Mount and on on tape and reel
Zero Voltage Crossing detector
UL File E52744 System Code "J"
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
C 2
NC 3
17223
6 MT2
5
ZCC*
NC
4 MT1
*Zero Crossing Circuit
Order Information
Part
BRT21H
BRT21M
BRT22F
BRT22H
Remarks
V
DRM
≤
400 V, DIP-6, 2.0 mA I
FT
V
DRM
≤
400 V, DIP-6, 3.0 mA I
FT
V
DRM
≤
600 V, DIP-6, 1.2 mA I
FT
V
DRM
≤
600 V, DIP-6, 2.0 mA I
FT
V
DRM
≤
600 V, DIP-6, 3.0 mA I
FT
V
DRM
≤
800 V, DIP-6, 1.2 mA I
FT
V
DRM
≤
800 V, DIP-6, 2.0 mA I
FT
V
DRM
≤
800 V, DIP-6, 3.0 mA I
FT
V
DRM
≤
400 V, DIP-6 400 mil (option 6), 2.0 mA I
FT
V
DRM
≤
400 V, SMD-6 (option 7), 2.0 mA I
FT
V
DRM
≤
400 V, DIP-6 400 mil (option 6), 3.0 mA I
FT
V
DRM
≤
600 V, SMD-6 (option 7), 1.2 mA I
FT
Applications
• Industrial controls
• Office equipment
• Consumer appliances
BRT22M
BRT23F
BRT23H
BRT23M
Description
The BRT21, BRT22, BRT23 product family consists
of AC switch optocouplers with zero voltage detec-
tors with two electrically insulated lateral power ICs
which integrate a thyrister system, a photo detector
and noise suppression at the output and an IR GaAs
diode input
High input sensitivity is achieved by using an emitter
follower phototransistor and an SCR predriver result-
ing in an LED trigger current of less than 2 mA or 3 mA
(DC). Inverse parallel SCRs provide commutating
dv/dt greater than 10 kV/µs
The zero cross line voltage detection circuit consists
of two MOSFETS and a photodiode.
THe BRT21/ 22/ 23 product family isolates low-volt-
age logic from 120, 230 and 380 VAC lines to control
resistive, inductive or capacitive loads including
motors, solenoids, high current thyristers or TRIAC
and relays.
BRT21H-X006
BRT21H-X007
BRT21M-X006
BRT22F-X006
BRT22F-X0067 V
DRM
≤
600 V, SMD-6 (option 7), 1.2 mA I
FT
BRT22H-X007
BRT22M-X006
BRT23F-X006
BRT23F-X007
BRT23H-X006
BRT23H-X007
BRT23M-X006
BRT23M-X007
V
DRM
≤
600 V, SMD-6 (option 7), 2.0 mA I
FT
V
DRM
≤
600 V, DIP-6 400 mil (option 6), 3.0 mA I
FT
V
DRM
≤
800 V, DIP-6 400 mil (option 6), 1.2 mA I
FT
V
DRM
≤
800 V, DIP-6 400 mil (option 6), 1.2 mA I
FT
V
DRM
≤
800 V, DIP-6 400 mil (option 6), 2.0 mA I
FT
V
DRM
≤
800 V, SMD-6 (option 7), 2.0 mA I
FT
V
DRM
≤
800 V, DIP-6 400 mil (option 6), 3.0 mA I
FT
V
DRM
≤
800 V, SMD-6 (option 7), 3.0 mA I
FT
For additional information on the available options refer to
Option Information.
Document Number 83690
Rev. 1.4, 10-Jan-05
www.vishay.com
1
BRT21/ 22/ 23
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
Test condition
I
R
= 10
µA
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
1.33
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Peak off-state voltage
Test condition
I
D(RMS)
= 70
µA
Part
BRT21
BRT22
BRT23
RMS on-state current
Single cycle surge current
Power dissipation
Derate from 25 °C
P
diss
Symbol
V
DM
V
DM
V
DM
I
TM
Value
400
600
800
300
3.0
600
6.6
Unit
V
V
V
mA
A
mW
mW/°C
Coupler
Parameter
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
Isolation test voltage (between t = 1.0 min.
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
Pollution degree (DIN VDE
0109)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Soldering temperature
max.
≤
10 sec. dip soldering
≥
0.5 mm from case bottom
R
IO
R
IO
T
stg
T
amb
T
sld
2
≥
7.0
≥
7.0
≥
175
mm
mm
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
260
Ω
Ω
°C
°C
°C
www.vishay.com
2
Document Number 83690
Rev. 1.4, 10-Jan-05
BRT21/ 22/ 23
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
ambient
Test condition
I
F
= 10 mA
V
R
= 6.0 V
V
F
= 0 V, f = 1.0 MHz
Symbol
V
F
I
R
C
O
R
thja
Min
Typ.
1.16
0.1
25
750
Max
1.35
10
Unit
V
µA
pF
K/W
Output
Parameter
Off-state voltage
Off-state current
On-state voltage
On-state current
Surge (non-repetitive), on-state
current
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
Holding current
Latching current
Zero cross inhibit voltage
Turn-on time
Turn-off time
Critical rate of rise of off-state
voltage
Critical rate of rise of voltage at
current commutation
V
T
= 2.2 V
I
F
= Rated I
FT
V
RM
= V
DM
= V
D(RMS)
PF = 1.0, I
T
= 300 mA
V
D
= 0.67 V
DRM
, T
J
= 25 °C
V
D
= 0.67 V
DRM
, T
J
= 80 °C
V
D
= 0.67 V
DRM
,
di/dt
crq
≤
15 A/ms, T
j
= 25 °C
V
D
= 0.67 V
DRM
,
di/dt
crq
≤
15 A/ms, T
j
= 80 °C
Critical rate of rise of on-state
Thermal resistance, junction to
ambient
I
F
= I
FT1
, V
DRM
Test condition
I
D(RMS)
= 70
µA
V
D
= V
DRM
, T
amb
= 100 °C,
I
F
= 0 mA
I
T
= 300 mA
PF = 1.0, V
T(RMS)
= 1.7 V
f = 50 Hz
Symbol
V
D(RMS)
V
DRM
I
D(RMS)
V
TM
I
TM
I
TSM
∆I
FT1
/∆T
j
∆I
FT2
/∆T
j
∆V
DINH
/∆T
j
I
DINH
I
H
I
L
V
IH
t
on
t
off
dv/dt
cr
dv/dt
cr
dv/dt
crq
dv/dt
crq
di/dt
cr
R
thja
10000
5000
10000
5000
8.0
125
7.0
7.0
-20
50
65
5.0
15
35
50
25
200
500
Min
424
600
10
1.7
100
3.0
300
3.0
14
14
Typ.
460
Max
Unit
V
V
µA
V
mA
A
µA/K
µA/K
mV/K
µA
µA
mA
V
µs
µs
V/µs
V/µs
V/µs
V/µs
A/µs
K/W
Repetitive peak off-state voltage I
DRM
= 100
µA
Document Number 83690
Rev. 1.4, 10-Jan-05
www.vishay.com
3
BRT21/ 22/ 23
Vishay Semiconductors
Coupler
Parameter
Critical rate of rise of coupled
input/output voltage
Common mode coupling
capacitance
Capacitance (input-output)
Isolation resistance
f = 1.0 MHz, V
IO
= 0 V
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Trigger current
V
D
= 5.0 V, F - Versions
V
D
= 5.0 V, H - Versions
V
D
= 5.0 V, M - Versions
Test condition
I
T
= 0 A, V
RM
= V
DM
= V
D(RMS)
Symbol
dv
IO
/dt
C
CM
C
IO
R
is
R
is
I
FT
I
FT
I
FT
Min
Typ.
10000
0.01
0.8
≥
10
12
≥
10
11
1.2
2.0
3.0
Max
Unit
V/µs
pF
pF
Ω
Ω
mA
mA
mA
Power Factor Considerations
A snubber isn’t needed to eliminate false operation of
the TRIAC driver because of the high static and com-
mutating dv/dt with loads between 1.0 and 0.8 power
factors. When inductive loads with power factors less
than 0.8 are being driven, include a RC snubber or a
single capacitor directly across the device to damp
the peak commutating dv/ dt spike. Normally a com-
mutating dv/dt causes a turning-off device to stay on
due to the stored energy remaining in the turning-off
device.
But in the case of a zero voltage crossing optotriac,
the commutating dv/dt spikes can inhibit one half of
the TRIAC from turning on. If the spike potential
exceeds the inhibit voltage of the zero cross detection
circuit, half of the TRIAC will be heldoff and not turn-
on. This hold-off condition can be eliminated by using
a snubber or capacitor placed directly across the
optotriac as shown in Figure 1. Note that the value of
the capacitor increases as a function of the load cur-
rent.
The hold-off condition also can be eliminated by pro-
viding a higher level of LED drive current. The higher
LED drive provides a larger photocurrent which
causes the phototransistor to turn-on before the com-
mutating spike has activated the zero cross network.
Figure 2 shows the relationship of the LED drive for
power factors of less than 1.0. The curve shows that
if a device requires 1.5 mA for a resistive load, then
1.8 times 2.7 mA) that amount would be required to
control an inductive load whose power factor is less
than 0.3.
1
Cs(µF) = 0.0032 (µF)* 10^(0.0066IL (mA)
Cs - Shunt Capacitance -
µF
.1
.01
Ta = 25°C, PF = 0.3
IF = 2.0 mA
.001
0
iil410_01
50
100
150
200
250
300
350
400
IL - Load Current - mA(RMS)
Figure 1. Shunt Capacitance vs. Load Current
www.vishay.com
4
Document Number 83690
Rev. 1.4, 10-Jan-05
BRT21/ 22/ 23
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.0
iil410_02
IFth Normalized to IFth @ PF = 1.0
Ta = 25°C
LED - LED Power - mW
150
NIFth - Normalized LED
Trigger Current
100
50
0.2
0.4
0.6
0.8
PF - Power Factor
1.0
1.2
iil410_05
0
-60
-40
-20
0
20
40
60
Ta - Ambient Temperature - °C
80
100
Figure 2. Normalized LED Trigger Current vs. Power Factor
Figure 5. Maximum LED Power Dissipation
1.4
1.3
VF - Forward Voltage - V
Ta = -55°C
1.2
1.1
1.0
0.9
0.8
0.7
.1
1
10
IF - Forward Current - mA
100
iil410_06
Ta = 25°C
IT = f(VT),
parameter: Tj
Ta = 85°C
iil410_03
Figure 3. Forward Voltage vs. Forward Current
Figure 6. Typical Output Characteristics
10000
If(pk) - Peak LED Current - mA
τ
Duty Factor
.005
.01
.02
.05
.1
.2
.5
1000
t
DF =
τ
/t
I
TRMS
=f(T
A
),
R
thJA
=150 K/W
Device switch
soldered in pcb
or base plate.
100
10
10 -6
iil410_04
10 -5
10 -4 10 -3 10 -2 10 -1
t -LED Pulse Duration -s
10 0
101
iil410_07
Figure 4. Peak LED Current vs. Duty Factor, Tau
Figure 7. Current Reduction
Document Number 83690
Rev. 1.4, 10-Jan-05
www.vishay.com
5
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