BIPOLARICS, INC.
Part Number BRF504
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
•
High Gain Bandwidth Product
f = 10 GHz typ @ I
C
= 4mA
t
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF504 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF504 an excellent choice for battery application. From 4
mA to over 8mA, f
t
is nominally 10 GHz. Maximum
recommended continuous current is 16 mA. A broad range
of packages are offered including SOT-23, SOT-143, plastic
and ceramic 0.085" Micro-X, 0.070" Stripline and unencap-
sulated dice.
•
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
•
High Gain
|S
21
|
2
= 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
•
Dice, Plastic, Hermetic and Surface
Mount packages available
V
CBO
V
CEO
V
EBO
I
C CONT
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
10
10
1.5
8
200
-65 to 150
V
V
V
mA
o
C
o
C
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
PARAMETERS & CONDITIONS
V
CE
=8V, I
C
= 4 mA unless stated
SYMBOL
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz, I
C
= 4 mA
I
C
= 8 mA
f = 2.0 GHz, I
C
= 4mA
I
C
= 8 mA
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Z
S
= 50Ω
f = 1MHz
: V
CB
=8V
GHz
10
17.5
18.1
12.8
12.6
|S
21
|
2
P
1d B
G
1d B
NF
h
FE
I
CBO
I
EBO
Power output at 1dB compression:
Gain at 1dB compression:
Noise Figure: V
CE
=8V, I
C
= 0.8mA
Forward Current Transfer Ratio:
V
CE
= 8V, I
C
= 4 mA
Collector Cutoff Current
Emitter Cutoff Current : V
EB
=1V
Collector Base Capacitance: V
CB
= 8V
dBm
dBm
dB
10
15
1.6
50
µA
µA
100
250
0.2
1.0
C
CB
f = 1MHz
pF
0.07
FPGA/CPLD
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