BR3500 - BR3512
PRV : 50 - 1200 Volts
Io : 35 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 17.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Notes :
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
R
θ
JA
T
J
T
STG
BR
3500
50
35
50
BR
3501
100
70
100
BR
3502
200
140
200
BR
3504
400
280
400
35
BR
3506
600
420
600
BR
3508
800
560
800
BR
3510
1000
700
1000
BR
3512
1200
840
1200
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
°C
400
660
1.1
10
200
1.5
10
- 40 to + 150
- 40 to + 150
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3512 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
42
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
35
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
500
28
400
T
J
= 50
°C
21
300
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
200
7
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
FORWARD CURRENT, AMPERES
T
J
= 100
°C
REVERSE CURRENT,
MICROAMPERES
10
1.0
1.0
Pulse Width = 300
µs
1 % Duty Cycle
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
Microchip MCU
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