Datasheet
Serial EEPROM series Standard EEPROM
I
2
C BUS EEPROM (2-Wire)
BR24Sxxx-W
(8K 16K 32K 64K 128K 256K)
●General
Description
2
BR24Sxxx-W is a serial EEPROM of I C BUS interface method
●Features
2
Completely conforming to the world standard I C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
Other devices than EEPROM can be connected to
the same port, saving microcontroller port
1.7V to 5.5V single power source action most suitable
for battery use
FAST MODE 400kHz at 1.7V to 5.5V
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
Auto erase and auto end function at data rewrite
Low current consumption
At write operation (5V)
: 0.5mA (Typ.)
At read operation (5V)
: 0.2mA (Typ.)
At standby operation (5V) : 0.1μA (Typ.)
Write mistake prevention function
Write (write protect) function added
Write mistake prevention function at low voltage
Data rewrite up to 1,000,000 times
Data kept for 40 years
Noise filter built in SCL / SDA terminal
Shipment data all address FFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page
write
Number of pages
Product number
●BR24Sxxx-W
Capacity
8Kbit
16Kbit
32Kbit
64Kbit
128Kbit
256Kbit
Bit
format
1K×8
2K×8
4K×8
8K×8
16K×8
32K×8
Type
BR24S08-W
BR24S16-W
BR24S32-W
BR24S64-W
16Byte
BR24S08-W
BR24S16-W
32Byte
BR24S32-W
BR24S64-W
64Byte
BR24S128-W
BR24S256-W
Power source
voltage
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
SOP8
●
●
●
●
●
●
SOP-J8
●
●
●
●
●
●
SSOP-B8 TSSOP-B8
●
●
●
●
●
●
●
●
●
●
MSOP8
●
●
●
●
TSSOP-B8J
●
●
●
●
VSON008
X2030
●
●
●
BR24S128-W
BR24S256-W
○Product
structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
●Absolute
Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Supply Voltage
V
CC
Datasheet
Ratings
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Unit
V
Remarks
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
Power Dissipation
Pd
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
mW
When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
Storage Temperature
Operating Temperature
Terminal Voltage
Tstg
Topr
‐
－65
to +125
－40
to +85
-0.3 to Vcc+1.0
℃
℃
V
●Memory
cell characteristics (Ta=25℃, Vcc=1.7V to 5.5V)
Limits
Parameter
Min.
Typ.
Number of data rewrite times
*1
1,000,000
-
*1
Data hold years
40
-
*1 Not 100% TESTED
Max.
-
-
Unit
Times
Years
●Recommended
Operating Ratings
Parameter
Symbol
Power source voltage
Vcc
Input voltage
V
IN
Ratings
1.7 to 5.5
0 to Vcc
Unit
V
●Electrical
Characteristics
(Unless otherwise specified, Ta=-40℃ to +85℃, V
CC
=1.7V to 5.5V)
Limits
Parameter
Symbol
Unit
Min
Typ.
Max.
"H" Input Voltage1
"L" Input Voltage1
"L" Output Voltage1
"L" Output Voltage2
Input Leakage Current
Output Leakage Current
VIH1
VIL1
VOL1
VOL2
ILI
ILO
0.7Vcc
-0.3
-
-
-1
-1
-
Current consumption
at action
ICC1
-
ICC2
Standby Current
ISB
-
-
-
-
-
2.5
0.5
2.0
mA
μA
-
-
-
-
-
-
-
Vcc+1.0
0.3Vcc
0.4
0.2
1
1
2.0
mA
V
V
V
V
μA
μA
Condition
IOL=3.0mA , 2.5V≦Vcc≦5.5V (SDA)
IOL=0.7mA , 1.7V≦Vcc≦2.5V (SDA)
VIN=0 to Vcc
VOUT=0 to Vcc (SDA)
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S08/16/32/64-W
Vcc=5.5V , fSCL =400kHz, tWR=5ms
Byte Write, Page Write BR24S128/256-W
Vcc=5.5V , fSCL =400kHz
Random read, Current read, Sequential read
Vcc=5.5V , SDA・SCL=Vcc
A0, A1, A2=GND, WP=GND
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
2/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
●Action
timing characteristics
(Unless otherwise specified, Ta=
-
40℃ to +85℃, V
CC
=1.7V to 5.5V)
Parameter
SCL Frequency
Data clock "High" time
Data clock "Low" time
SDA, SCL rise time *1
SDA, SCL fall time
*1
Start condition hold time
Start condition setup time
Input data hold time
Input data setup time
Output data delay time
Output data hold time
Stop condition data setup time
Bus release time before transfer start
Internal write cycle time
Noise removal valid period (SDA,SCL terminal)
WP hold time
WP setup time
WP valid time
*1 : Not 100% TESTED
*2 : BR24S16/64-W : 1.0μs.
Datasheet
Symbol
fSCL
tHIGH
tLOW
tR
tF
tHD:STA
tSU:STA
tHD:DAT
tSU:DAT
tPD
tDH
tSU:STO
tBUF
tWR
tI
tHD:WP
tSU:WP
tHIGH:WP
Limits
Min.
-
0.6
1.2
-
-
0.6
0.6
0
100
0.1
0.1
0.6
1.2
-
-
0
0.1
1.0
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
400
-
-
0.3 *2
0.3
-
-
-
-
0.9
-
-
-
5
0.1
-
-
-
Unit
kHz
μs
μs
μs
μs
μs
μs
ns
ns
μs
μs
μs
μs
ms
μs
ns
μs
μs
●Sync
data input / output timing
tR
SCL
tHD:STA
SDA
(入力)
(Input)
tBUF
(出力)
(Output)
SDA
tPD
tDH
tSU:DAT
tLOW
tHD:DAT
tF
tHIGH
SCL
tSU:STA
SDA
tHD:STA
tSU:STO
START BIT
STOP BIT
○Input
read at the rise edge of SCL
○Data
output in sync with the fall of SCL
Figure 1-(a) Sync data input / output timing
Figure 1-(b) Start - stop bit timing
SCL
SCL
DATA(1)
DATA(n)
ACK
ACK
½WR
WP
ストップコンディション
Stop condition
SDA
D0
ACK
WRITE DATA(n)
STOP
CONDITION
t
WR
START
CONDITION
SDA
D1
D0
tSU：WP
½HD：WP
Figure 1-(c) Write cycle timing
Figure 1-(d) WP timing at write execution
SCL
DATA(1)
SDA
D1
D0
ACK
tHIGH:WP
WP
DATA(n)
ACK
tWR
tWR
○At
write execution, in the area from the D0 taken clock rise of the first
DATA(1), to tWR, set WP= 'LOW'.
○By
setting WP "HIGH" in the area, write can be cancelled.
When it is set WP = 'HIGH' during tWR, write is forcibly ended, and data
of address under access is not guaranteed, therefore write it once again.
Figure 1-(e) WP timing at write cancel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
3/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
●Block
Diagram
Datasheet
*2
A0
1
*1
10bit
11bit
12bit
13bit
14bit
15bit
8Kbit to 256Kbit EEPROM
array
8bit
8
Vcc
*2
A1
2
Adddress
decoder
*1
10bit
11bit
12bit
13bit
14bit
15bit
Slave - word
address register
Data
register
7
WP
START
*2
STOP
A2
3
Control circuit
ACK
6
SCL
GND
4
High voltage
generating circuit
＊
Power source
voltage detection
＊
5
SDA
1
10bit: BR24S08-W
11bit: BR24S16-W
12bit: BR24S32-W
13bit: BR24S64-W
14bit: BR24S128-W
15bit: BR24S256-W
2
A0, A1=Don't use: BR24S08-W
A0, A1, A2=Don't use: BR24S16-W
●Pin
Configuration
(TOP VIEW)
A0
1
8
Vcc
A1
2
A2
3
BR24S08-W
BR24S16-W
BR24S32-W
BR24S64-W
BR24S128-W
BR24S256-W
7
WP
6
SCL
GND
4
5
SDA
●Pin
Descriptions
Terminal
name
A0
A1
A2
GND
SDA
SCL
WP
Vcc
Input/
Output
Input
Input
Input
-
Input / Output
Input
Input
-
Function
BR24S08-W
Don't use
Don't use
Slave address setting
BR24S16-W
Don't use
Don't use
Don't use
Reference voltage of all input / output, 0V.
Slave and word address,
Serial data input serial data output
Serial clock input
Write protect terminal
Connect the power source.
BR24S32/64/128/256-W
Slave address setting
Slave address setting
Slave address setting
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
4/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
●Typical
Performance Curves
(The following values are Typ. ones.)
Datasheet
Figure 2. "H" Input Voltage VIH
(A0, A1, A2, SCL, SDA, WP)
Figure 3. "L" Input Voltage VIL
(A0, A1, A2, SCL, SDA, WP)
Figure 4. "L" Output Voltage
VOL-IOL1(Vcc=1.7V)
Figure 5. "L" Output Voltage VOL-IOL
(Vcc=2.5V)
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
