BPW83
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 65°
94
8490
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
DESCRIPTION
BPW83 is a PIN photodiode with high speed and high radiant
sensitivity in a black, side view plastic package with daylight
blocking filter. Filter bandwidth is matched with 870 nm to
950 nm IR emitters.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
BPW83
Note
Test condition see table “Basic Characteristics”
I
ra
(µA)
45
ϕ
(deg)
± 65
λ
0.5
(nm)
790 to 1050
ORDERING INFORMATION
ORDERING CODE
BPW83
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
Connected with Cu wire, 0.14
mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
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410
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81530
Rev. 1.4, 08-Sep-08
BPW83
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
Note
T
amb
= 25 °C, unless otherwise specified
V
R
= 10 V,
λ
= 870 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
TEST CONDITION
I
R
= 100 µA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 870 nm
E
e
= 1
mW/cm
2
,
λ
= 870 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
V
R
= 5 V
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
I
k
I
ra
43
MIN.
60
2
70
25
350
38
45
± 65
950
790 to 1050
4x
10
-14
100
100
40
30
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
µA
µA
deg
nm
nm
W/√ Hz
ns
ns
ϕ
λ
p
λ
0.5
NEP
t
r
t
f
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
I
ra rel
- Relative Reverse Light Current
1000
I
ro
- Reverse Dark Current (nA)
1.4
1.2
100
V
R
= 5
V
λ
= 950 nm
1.0
10
0.8
V
R
= 10
V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
94
8403
T
amb
- Ambient Temperature (°C)
94
8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81530
Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
411
BPW83
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
1000
1.2
S(λ)
rel
- Relative Spectral Sensivity
I
ra
- Reverse Light Current (µA)
1.0
0.8
0.6
0.4
0.2
0.0
750
100
10
1
λ
= 950 nm
V
R
= 5
V
0.1
0.01
94
8414
0.1
1
10
850
950
1050
1150
E
e
- Irradiance (mW/cm²)
94
8426
λ
-
Wavelength
(nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
I
ra
- Reverse Light Current (µA)
S
rel
- Relative Radiant Sensitivity
1 mW/cm
2
0.5 mW/cm
2
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.6
0.4
0.2
0
λ
= 950 nm
10
0.2 mW/cm
2
0.1
mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
1
0.1
1
10
100
0.7
94
8415
V
R
- Reverse
Voltage
(V)
94
8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80
C
D
- Diode Capacitance (pF)
60
E=0
f = 1 MHz
40
20
0
0.1
948407
1
10
100
V
R
- Reverse
Voltage
(V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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412
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81530
Rev. 1.4, 08-Sep-08
ϕ
- Angular Displacement
BPW83
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
A
C
technical drawings
according to DIN
specifications
5
- 0.2
± 0.3
3
- 0.2
Sensitive area
(3.2)
(0.7)
± 0.2
- 0.8
9.3
7.2
± 0.2
6.4
20.2
< 0.65
1.5
< 0.7
Area not plane
0.45
± 0.05
0.95
± 0.2
2.54 nom.
0.4
± 0.05
Drawing-No.: 6.544-5109.01-4
Issue:1; 01.07.96
96 12196
Document Number: 81530
Rev. 1.4, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
413
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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