BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8583
• Angle of half sensitivity:
ϕ
= ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high
radiant sensitivity in miniature, flat, top view, clear plastic
package. It is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
BPW34
BPW34S
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
50
50
ϕ
(deg)
± 65
± 65
λ
0.1
(nm)
430 to 1100
430 to 1100
ORDERING INFORMATION
ORDERING CODE
BPW34
BPW34S
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Tube
REMARKS
MOQ: 3000 pcs, 3000 pcs/bulk
MOQ: 1800 pcs, 45 pcs/tube
PACKAGE FORM
Top view
Top view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
3s
Connected with Cu wire, 0.14
mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 2.1, 23-Aug-11
Document Number: 81521
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1
E
e
= 1
E
e
= 1
E
e
= 1
E
e
mW/cm
2
,
mW/cm
2
,
mW/cm
2
,
mW/cm
2
,
λ
= 950 nm
λ
= 950 nm
λ
= 950 nm
λ
= 950 nm
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
TK
Ik
I
ra
I
ra
40
MIN.
60
2
70
25
350
- 2.6
70
47
0.1
75
50
± 65
900
430 to 1100
4 x 10
-14
100
100
40
30
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
mV/K
μA
μA
%/K
μA
μA
deg
nm
nm
W/√Hz
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
ϕ
λ
p
λ
0.1
NEP
t
r
t
f
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
ro
- Reverse Dark Current (nA)
1.4
I
ra, rel
- Relative Reverse Light Current
1.2
100
V
R
= 5 V
λ
= 950 nm
1.0
10
0.8
V
R
= 10 V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
94 8403
T
amb
- Ambient Temperature (°C)
94 8416
T
amb
- Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 2.1, 23-Aug-11
Document Number: 81521
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW34, BPW34S
www.vishay.com
Vishay Semiconductors
1000
I
ra
- Reverse Light Current (µA)
C
D
- Diode Capacitance (pF)
80
100
60
E=0
f = 1 MHz
10
40
1
V
R
= 5 V
λ
= 950 nm
20
0.1
0.01
94 8417
0.1
1
2
10
0
0.1
948407
1
10
100
E
e
- Irradiance (mW/cm )
V
R
- Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
S(λ)
rel
- Relative Spectral Sensitivity
10
4
I
ra
- Reverse Light Current (µA)
1.0
0.8
0.6
0.4
0.2
0
350
550
750
950
1150
100
10
V
R
= 5 V
1
0.1
10
1
94 8418
10
2
10
3
E
A
- Illuminance (lx)
94 8420
λ
-
Wavelength
(nm)
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
100
I
ra
- Reverse Light Current (µA)
0°
10°
20°
30°
1 mW/cm
2
0.5 mW/cm
2
S
rel
- Relative Radiant Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2 mW/cm
2
10
0.1 mW/cm
2
0.05 mW/cm
2
λ
= 950 nm
0.1
1
10
100
1
94 8419
V
R
- Reverse Voltage (V)
94 8406
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 2.1, 23-Aug-11
Document Number: 81521
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
BPW34, BPW34S
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
96 12186
TUBE PACKAGING DIMENSIONS
in millimeters
10.7
Quantity per tube: 45 pcs
Quantity per
box:
1800 pcs
9.5
214.5
Stopper
18800
Fig. 9 - Drawing Proportions not scaled
Rev. 2.1, 23-Aug-11
Document Number: 81521
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000