BPW21R
www.vishay.com
Vishay Semiconductors
Silicon Photodiode
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity:
ϕ
= ± 50°
94 8394
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
• Low dark current
• High shunt resistance
• High linearity
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
DESCRIPTION
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the
spectral response of the human eye.
APPLICATIONS
• Sensor in exposure and color measuring purposes
PRODUCT SUMMARY
COMPONENT
BPW21R
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
9
ϕ
(deg)
± 50
λ
0.5
(nm)
420 to 675
ORDERING INFORMATION
ORDERING CODE
BPW21R
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 500 pcs, 500 pcs/bulk
PACKAGE FORM
TO-5
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5s
Connected with Cu wire, 0.14 mm
2
T
amb
≤
50 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
10
300
125
- 40 to + 125
- 40 to + 125
260
250
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.7, 23-Nov-11
Document Number: 81519
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW21R
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 50 mA
I
R
= 20 μA, E = 0
V
R
= 5 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
V
R
= 10 mV
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
V
R
= 5 V, E
A
=
10
-2
to
10
5
lx
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
R
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
S
ϕ
λ
p
λ
0.5
V
R
= 0 V, R
L
= 1 kΩ,
λ
= 660 nm
V
R
= 0 V, R
L
= 1 kΩ,
λ
= 660 nm
t
r
t
f
4.5
4.5
280
10
2
1.2
400
38
450
-2
9
- 0.05
9
9
± 50
565
420 to 675
3.1
3.0
30
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
nF
pF
GΩ
mV
mV/K
μA
%/K
μA
nA/Ix
deg
nm
nm
μs
μs
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
K
Reverse light current
Sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
4
1.3
I
ra rel
- RelativeReverse Light Current
I
ro
- Reverse Dark Current (nA)
10
3
1.2
1.1
10
2
V
R
= 5 V
10
1
1.0
0.9
0.8
0
20
40
60
80
100
120
T
amb
- Ambient Temperature
10
20
94 8468
40
60
80
100
120
94 8738
T
amb
- Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.7, 23-Nov-11
Document Number: 81519
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW21R
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
10
I
K
- Short Circuit Current (µA)
3
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
6
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.6
0.4
0.2
0
0.7
94 8476
E
A
- Illuminance (lx)
94 8475
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
1400
C
D
- Diode Capacitance (pF)
1200
1000
800
600
400
200
0
0.1
1
10
100
E=0
f = 1 MHz
94 8473
V
R
- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
S (λ)
rel
- Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
350
V
λ
Eye
450
550
650
750
94 8477
λ
- Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.7, 23-Nov-11
Document Number: 81519
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
10
2
S
rel
- Relative Sensitivity
BPW21R
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
9.1
± 0.1
+
-
5.08 nom.
Ø 8.13
± 0.1
± 0.2
Ø 5.9
± 0.1
Chip position
3.1
14
-1
(1.65)
technical drawings
according to DIN
specifications
Ø 0.45
+ 0.02
- 0.05
Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181
Rev. 1.7, 23-Nov-11
Document Number: 81519
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000