BPW16N
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 40°
94
8638
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
DESCRIPTION
BPW16N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-¾ plastic package with flat window. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW16N
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
0.14
ϕ
(deg)
± 40
λ
0.1
(nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW16N
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
3s
Connected with Cu wire, 0.14
mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
55 °C
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
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366
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81515
Rev. 1.7, 08-Sep-08
BPW16N
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
125
P
V
- Power Dissipation (mW)
100
75
R
thJA
= 450 K/W
50
25
0
0
94
8308
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Note
T
amb
= 25 °C, unless otherwise specified
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 0.01 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
E
e
= 1
mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
I
ca
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
4.8
5.0
120
0.07
MIN.
32
1
8
0.14
± 40
825
450 to 1040
0.3
200
TYP.
MAX.
UNIT
V
nA
pF
mA
deg
nm
nm
V
µs
µs
kHz
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
2.0
10
4
I
CEO
- Collector Dark Current (nA)
I
ca rel
- Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
V
CE
= 5
V
E
e
= 1 mW/cm
2
λ
= 950 nm
10
3
V
CE
= 20
V
10
2
10
1
10
0
20
94
8235
40
60
80
100
T
amb
- Ambient Temperature (°C)
94
8239
T
amb
- Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Document Number: 81515
Rev. 1.7, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
367
BPW16N
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
1
t
on
/ t
off
-Turn on / Turn off Time (µs)
I
ca
- Collector Light Current (mA)
12
10
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
0.1
V
CE
= 5
V
λ=
950 nm
0.01
8
6
4
2
0
t
off
t
on
0.001
0.01
94
8236
0.1
1
10
94
8238
0
4
8
12
16
E
e
- Irradiance (mW/cm
2
)
I
C
- Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
S (
λ)
rel
- Relative Spectral Sensitivity
100
1
I
ca
- Collector Light Current (mA)
1.0
0.8
0.6
0.4
0.2
0
400
λ
= 950 nm
E
e
=1 mW/cm
2
0.5 mW/cm
2
0.1
0.2 mW/cm
2
0.01
0.1
94
8237
1
10
600
800
1000
V
CE
- Collector Emitter
Voltage
(V)
94
8241
λ
-
Wavelength
(nm)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
C
CEO
- Collector Emitter Capacitance (pF)
20
16
f = 1 MHz
S
rel
- Relative Radiant Sensitivity
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
12
8
4
0
0.1
1
10
100
V
CE
- Collector Emitter
Voltage
(V)
94
8240
94
8312
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com
368
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81515
Rev. 1.7, 08-Sep-08
ϕ
- Angular Displacement
BPW16N
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
R 1.65
E
C
3.3
± 0.15
± 0.3
± 0.1
2.4
± 0.15
Chip position
Ø 1.8
± 0.1
(1.3)
2.2
0.8
± 0.5
29.1
2.7
± 0.3
Area not plane
± 0.25
2.54 nom.
6.544-5047.01-4
Issue: 2; 19.12.00
96 12188
1.5
0.5
+ 0.2
- 0.1
0.4
+ 0.15
technical drawings
according to DIN
specifications
Document Number: 81515
Rev. 1.7, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
369
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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