BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
12784
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 15°
• Base terminal connected
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT
BPV11F
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
9
ϕ
(deg)
± 15
λ
0.5
(nm)
900 to 980
ORDERING INFORMATION
ORDERING CODE
BPV11F
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 3000 pcs, 3000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5 s, 2 mm from body
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
47 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
80
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81505
Rev. 1.6, 05-Sep-08
BPV11F
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
200
P
V
- Power Dissipation (mW)
160
120
R
thJA
80
40
0
0
94
8300
20
40
60
80
T
amb
- Ambient Temperature (°C)
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
DC current gain
Collector emitter capacitance
Collector base capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Note
T
amb
= 25 °C, unless otherwise specified
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 10 V, E = 0
V
CE
= 5 V, I
C
= 5 mA, E = 0
V
CE
= 0 V, f = 1 MHz, E = 0
V
CE
= 0 V, f = 1 MHz, E = 0
E
e
= 1
mW/cm
2
,
λ
= 950 nm,
V
CB
= 5 V
SYMBOL
V
(BR)CEO
I
CEO
h
FE
C
CEO
C
CBO
I
ca
ϕ
λ
p
λ
0.5
V
CEsat
t
on
t
off
f
c
3
MIN.
70
1
450
15
19
9
± 15
930
900 to 980
130
6
5
110
300
pF
pF
mA
deg
nm
nm
mV
µs
µs
kHz
50
TYP.
MAX.
UNIT
V
nA
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
4
I
CEO
- Collector Dark Current (nA)
2.0
I
ca rel
- Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
V
CE
= 5
V
E
e
= 1 mW/cm
2
λ
= 950 nm
10
3
V
CE
= 10
V
10
2
10
1
10
20
94
8249
40
60
80
100
T
amb
- Ambient Temperature (°C)
94
8239
T
amb
- Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Document Number: 81505
Rev. 1.6, 05-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
347
BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
C
CBO
- Collector Base Capacitance (pF)
100
I
ca
- Collector Light Current (mA)
20
16
f = 1 MHz
10
12
1
V
CE
= 5
V
λ
= 950 nm
8
0.1
4
0
0.1
1
10
100
V
CB
- Collector Base
Voltage
(V)
0.01
0.01
94
8244
0.1
1
10
94
8246
E
e
- Irradiance (mW/cm²)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage
100
I
ca
- Collector Light Current (mA)
λ
= 950 nm
C
CEO
- Collector Ermitter Capacitance (pF)
20
16
f = 1 MHz
10
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
12
8
1
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
4
0
0.1
1
10
100
V
CE
- Collector Ermitter
Voltage
(V)
0.1
0.1
94
8245
1
10
100
V
CE
- Collector Emitter
Voltage
(V)
94
8247
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage
800
t
on
/t
off
- Turn-on/Turn-off Time (µs)
12
600
B - Amplification
V
CE
= 5
V
10
8
6
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
400
t
on
4
2
0
t
off
200
0
0.01
94
8250
0.1
1
10
100
94
8253
0
4
8
12
16
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
Fig. 6 - Amplification vs. Collector Current
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
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348
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81505
Rev. 1.6, 05-Sep-08
BPV11F
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
0°
S (λ)
rel
- Relative Spectral Sensitivity
10°
20°
30°
1.0
0.8
0.6
0.4
0.2
0
800
S
rel
- Relative Sensitivity
ϕ
- Angular Displacement
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
900
1000
1100
94
8248
0.6
0.4
0.2
0
94
8258
λ
–
Wavelength
(nm)
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
± 0.15
C
E
B
0.8
+ 0.2
- 0.1
5.75
Chip position
5
± 0.15
(4.55)
R
45
2.
(
he
sp
re
)
± 0.3
8.6
± 0.5
12.3
7.6
± 0.15
± 0.3
< 0.7
35
Area not plane
0.8
0.8
+ 0.2
- 0.1
+ 0.2
- 0.1
± 0.25
0.5
+ 0.2
- 0.1
0.5
+ 0.15
1.5
2.54 nom.
1.27 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5188.01-4
Issue:1; 01.07.96
96 12200
Document Number: 81505
Rev. 1.6, 05-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
349
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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