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B125C800DM

产品描述0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小78KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

B125C800DM概述

0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

B125C800DM规格参数

参数名称属性值
厂商名称Vishay(威世)
Reach Compliance Codeunknow
配置BRIDGE, 4 ELEMENTS
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1 V
最大非重复峰值正向电流45 A
元件数量4
最高工作温度125 °C
最大输出电流0.9 A
最大重复峰值反向电压300 V
表面贴装NO

文档预览

下载PDF文档
B40C800DM thru B380C800DM
www.vishay.com
Vishay Semiconductors
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
~
~
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFM
MECHANICAL DATA
Case:
DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
0.9 A
65 V to 600 V
45 A
10 μA
1.0 V
125 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked on body
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R- and C-load
Maximum average forward
output current for free air
operation at T
A
= 45 °C
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on
rated load
Rating for fusing at T
J
= 125 °C (t < 100 ms)
Minimum series resistor C-load at V
RMS
= ± 10 %
Maximum load capacitance
+ 50 %
- 10 %
R- and L-load
C-load
SYMBOL
V
RRM
V
RMS
I
F(AV)
V
DC
V
RWM
V
RSM
I
FRM
I
FSM
I
2
t
R
T
C
L
T
J
T
STG
1.0
5000
2.0
2500
65
90
100
125
180
200
B40
C800DM
65
40
B80
C800DM
125
80
B125
C800DM
200
125
0.9
0.8
200
300
350
10
45
10
4.0
1000
- 40 to + 125
- 40 to + 150
8.0
500
12.0
200
400
600
650
600
900
1000
B250
C800DM
400
250
B380
C800DM
600
380
UNIT
V
V
A
V
V
V
A
A
A
2
s
μF
°C
°C
Operating junction temperature range
Storage temperature range
Revision: 19-Aug-11
Document Number: 88533
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

B125C800DM相似产品对比

B125C800DM B40C800DM_11 B250C800DM B80C800DM
描述 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.9 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 0.9 A, 125 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 Vishay(威世) - Vishay(威世) Vishay(威世)
Reach Compliance Code unknow - unknow unknow
配置 BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1 V - 1 V 1 V
最大非重复峰值正向电流 45 A - 45 A 45 A
元件数量 4 - 4 4
最高工作温度 125 °C - 125 °C 125 °C
最大输出电流 0.9 A - 0.9 A 0.9 A
最大重复峰值反向电压 300 V - 600 V 180 V
表面贴装 NO - NO NO

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