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1N3889ARE3

产品描述Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
产品类别分立半导体    二极管   
文件大小508KB,共7页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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1N3889ARE3概述

Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

1N3889ARE3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明DO-4, 1 PIN
Reach Compliance Codecompli
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用FAST RECOVERY
外壳连接ANODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
JEDEC-95代码DO-203AA
JESD-30 代码O-MUPM-D1
JESD-609代码e3
最大非重复峰值正向电流250 A
元件数量1
相数1
端子数量1
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流20 A
封装主体材料METAL
封装形状ROUND
封装形式POST/STUD MOUNT
最大重复峰值反向电压50 V
最大反向电流10 µA
最大反向恢复时间0.2 µs
表面贴装NO
端子面层Matte Tin (Sn) - with Nickel (Ni) barrie
端子形式SOLDER LUG
端子位置UPPER
Base Number Matches1

文档预览

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1N3889 – 1N3891, 1N3893
Qualified Levels*:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
FAST RECOVERY RECTIFIERS
Qualified per MIL-PRF-19500/304*
DESCRIPTION
This 1N3889 – 1N3891 and 1N3893 family of rectifier devices are suitable for applications in
DC power supplies, inverters, converters, choppers and ultrasonic systems as well as other
applications. It can also be used as a free-wheeling diode. They are military qualified up to a
JANTXV level on select part numbers and they are available in both standard and reverse
polarities. Microsemi also offers numerous other products to meet higher and lower power
voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Very low forward voltage.
Fast recovery time.
Low thermal resistance.
Both polarities available.
JAN, JANTX, and JANTXV qualifications also available per MIL-PRF-19500/304.
*(Excludes part number 1N3889.)
RoHS compliant devices available by adding “e3” suffix.
DO-203AA
(DO-4)
Package
APPLICATIONS / BENEFITS
Available in 12 or 20 amp current ratings.
Short reverse recovery time.
High surge capability.
Hermetically sealed.
MAXIMUM RATINGS
@
T
C
= 25 ºC unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
non “A”
“A”
Reverse Voltage
1N3890 A/R/AR
1N3891 A/R/AR
1N3893 A/R/AR
Working Peak Reverse Voltage
1N3889 A/R/AR
1N3890 A/R/AR
1N3891 A/R/AR
1N3893 A/R/AR
Repetitive Peak Reverse Voltage
1N3889 A/R/AR
1N3890 A/R/AR
1N3891 A/R/AR
1N3893 A/R/AR
Average Forward Current, 180 degrees conduction
angle, 60 Hz, half sine wave
non “A”
@ T
C
= 100 ºC
“A”
Maximum Non-Repetitive Sinusoidal Surge Current
@ T
C
= 100 ºC (8.3 ms, half sine)
non “A”
“A”
NOTES:
1. Derate linearly 2 % of I
O
/ºC for T
C
> 100 ºC, see
Figure 5.
Symbol
T
J
& T
STG
R
ӨJC
V
R
Value
-65 to +175
2.0
1.5
100
200
400
50
100
200
400
50
100
200
400
12
20
175
250
Unit
o
o
C
Thermal Resistance Junction-to-Case
C/W
V
V
RWM
V (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
V
RRM
V
I
O
A
I
FSM
A (pk)
T4-LDS-0143, Rev. 2 (120861)
©2012 Microsemi Corporation
Page 1 of 7

 
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