64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
64K × 8 I2C/2-线 串行 电可擦除只读存储器, PDSO8
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Atmel (Microchip) |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP8,.3 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最大时钟频率 (fCLK) | 0.4 MHz |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e4 |
| 长度 | 5.29 mm |
| 内存密度 | 524288 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 64KX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 2/5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.16 mm |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.000001 A |
| 最大压摆率 | 0.003 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 1.8 V |
| 标称供电电压 (Vsup) | 2.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 宽度 | 5.24 mm |
| 最长写入周期时间 (tWC) | 5 ms |
| 写保护 | HARDWARE |
| Base Number Matches | 1 |
| AT24C512BW-SH-T | AT24C512B-W-113 | AT24C512BN-SH-B | AT24C512BN-SH-T | AT24C512BN-SH25-T | AT24C512BW-SH-B | AT24C512BY7-YH25-T | |
|---|---|---|---|---|---|---|---|
| 描述 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 组织 | 64KX8 | 64K X 8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 |
| 表面贴装 | YES | Yes | YES | YES | YES | YES | YES |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Atmel (Microchip) | - | Atmel (Microchip) | Atmel (Microchip) | Atmel (Microchip) | Atmel (Microchip) | Atmel (Microchip) |
| 零件包装代码 | SOIC | - | SOIC | SOIC | SOIC | SOIC | SOIC |
| 包装说明 | SOP, SOP8,.3 | - | SOP, SOP8,.25 | SOP, SOP8,.25 | SOP, SOP8,.25 | SOP, SOP8,.3 | HVSON, SOLCC8,.25 |
| 针数 | 8 | - | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | compliant | - | unknown | unknown | unknown | compliant | unknown |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大时钟频率 (fCLK) | 0.4 MHz | - | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz | 0.4 MHz |
| 数据保留时间-最小值 | 40 | - | 40 | 40 | 40 | 40 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010DDDR | - | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR | 1010DDDR |
| JESD-30 代码 | R-PDSO-G8 | - | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-N8 |
| JESD-609代码 | e4 | - | e4 | e4 | e4 | e4 | e4 |
| 长度 | 5.29 mm | - | 4.9 mm | 4.9 mm | 4.9 mm | 5.29 mm | 6 mm |
| 内存密度 | 524288 bit | - | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit |
| 内存集成电路类型 | EEPROM | - | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 湿度敏感等级 | 1 | - | 1 | 1 | 1 | 1 | - |
| 字数 | 65536 words | - | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | - | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | - | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | - | SOP | SOP | SOP | SOP | HVSON |
| 封装等效代码 | SOP8,.3 | - | SOP8,.25 | SOP8,.25 | SOP8,.25 | SOP8,.3 | SOLCC8,.25 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| 并行/串行 | SERIAL | - | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | 260 | - | 260 | 260 | 260 | 260 | - |
| 电源 | 2/5 V | - | 2/5 V | 2/5 V | 2/5 V | 2/5 V | 2/5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.16 mm | - | 1.75 mm | 1.75 mm | 1.75 mm | 2.16 mm | 0.6 mm |
| 串行总线类型 | I2C | - | I2C | I2C | I2C | I2C | I2C |
| 最大待机电流 | 0.000001 A | - | 0.000001 A | 0.000001 A | 0.000001 A | 0.000001 A | 0.000001 A |
| 最大压摆率 | 0.003 mA | - | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA |
| 最大供电电压 (Vsup) | 3.6 V | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 标称供电电压 (Vsup) | 2.5 V | - | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 技术 | CMOS | - | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | - | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子节距 | 1.27 mm | - | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 处于峰值回流温度下的最长时间 | 40 | - | 40 | 40 | 40 | 40 | - |
| 宽度 | 5.24 mm | - | 3.9 mm | 3.9 mm | 3.9 mm | 5.24 mm | 4.9 mm |
| 最长写入周期时间 (tWC) | 5 ms | - | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms |
| 写保护 | HARDWARE | - | HARDWARE | HARDWARE | HARDWARE | HARDWARE | HARDWARE |
| Base Number Matches | 1 | - | 1 | 1 | 1 | 1 | 1 |
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