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SR809B0

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 90V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小200KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SR809B0概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 90V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

SR809B0规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.92 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压90 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
SR802 thru SR820
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@8A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
dV/dt
R
θJA
T
J
T
STG
- 55 to +125
15
-
10
-
10000
40
- 55 to +150
- 55 to +150
SR
802
20
14
20
SR
803
30
21
30
SR
804
40
28
40
SR
805
50
35
50
SR
806
60
42
60
8
150
0.70
0.92
0.1
-
5
V/μs
O
SR
809
90
63
90
SR
810
100
70
100
SR
815
150
105
150
SR
820
200
140
200
UNIT
V
V
V
A
A
1.02
V
mA
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
C
C
Document Number: DS_D1309011
Version: I13

 
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