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SMBJ5.0C

产品描述Trans Voltage Suppressor Diode, 600W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN
产品类别分立半导体    二极管   
文件大小227KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SMBJ5.0C概述

Trans Voltage Suppressor Diode, 600W, 5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN

SMBJ5.0C规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PDSO-C2
Reach Compliance Code_compli
ECCN代码EAR99
其他特性UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
最大击穿电压7.3 V
最小击穿电压6.4 V
击穿电压标称值6.85 V
最大钳位电压9.6 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散3 W
认证状态Not Qualified
最大重复峰值反向电压5 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

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CREAT BY ART
SMBJ SERIES
600 Watts Suface Mount Transient Voltage Suppressor
SMB/DO-214AA
Pb
RoHS
COMPLIANCE
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from
0 volt to BV min
Typical I
R
less than 1uA above 10V
High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
Plastic material used carried Underwriters
Laboratory Flammability Classification 94V-0
600 watts peak pulse power capability with a
10/1000 us waveform
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band except bipolar
Standard packaging: 12mm tape per EIA Std RS-481
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Marking Diagram
XX
G
Y
M
= Specific Device Code
= Green Compound
= Year
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Peak Power Dissipation at T
A
=25℃, Tp=1ms(Note 1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)(Note 2) - Unidirectional Only
Maximum Instantaneous Forward Voltage at 50.0A for
Unidirectional Only (Note 4)
Typical Thermal Resistance
Operating and Storage Temperature Range
Symbol
P
PK
P
D
I
FSM
Value
600
3
100
Unit
Watts
Watts
Amps
V
F
R
θJC
R
θJA
T
J
, T
STG
3.5 / 5.0
10
55
-65 to +150
Volts
℃/W
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Note 2: Mounted on 10 x 10mm Copper Pads to Each Terminal
Note 3: V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170
2. Electrical Characterstics Apply in Both Directions
Version:G11

 
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