20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-8
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Rochester Electronics |
| 零件包装代码 | DIP |
| 包装说明 | PLASTIC, DIP-8 |
| 针数 | 8 |
| Reach Compliance Code | unknow |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.02 A |
| 集电极-发射极最大电压 | 36 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小直流电流增益 (hFE) | 80 |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | NOT APPLICABLE |
| 元件数量 | 2 |
| 端子数量 | 8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | 240 |
| 极性/信道类型 | PNP |
| 认证状态 | COMMERCIAL |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 190 MHz |

| SSM2220P | SSM2220SZ-REEL | SSM2220PZ | SSM2220SZ | SSM2220S | SSM2220S-REEL | |
|---|---|---|---|---|---|---|
| 描述 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-8 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-8 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-8 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-8 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-8 | 20mA, 36V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-8 |
| 是否无铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 |
| 包装说明 | PLASTIC, DIP-8 | SO-8 | PLASTIC, DIP-8 | SO-8 | SO-8 | SO-8 |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| 集电极-发射极最大电压 | 36 V | 36 V | 36 V | 36 V | 36 V | 36 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小直流电流增益 (hFE) | 80 | 80 | 80 | 80 | 80 | 80 |
| JESD-30 代码 | R-PDIP-T8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609代码 | e0 | e3 | e3 | e3 | e0 | e0 |
| 湿度敏感等级 | NOT APPLICABLE | 1 | NOT APPLICABLE | 1 | 1 | NOT APPLICABLE |
| 元件数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 240 | 260 | NOT APPLICABLE | 260 | 240 | 240 |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
| 认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 表面贴装 | NO | YES | NO | YES | YES | YES |
| 端子面层 | TIN LEAD | MATTE TIN | MATTE TIN | MATTE TIN | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 30 | 40 | NOT APPLICABLE | 40 | 30 | 30 |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 190 MHz | 190 MHz | 190 MHz | 190 MHz | 190 MHz | 190 MHz |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 符合 | - | - |
| 厂商名称 | Rochester Electronics | - | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
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