6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | DLCC |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 |
| 针数 | 3 |
| Reach Compliance Code | _compli |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (Abs) (ID) | 6 A |
| 最大漏极电流 (ID) | 6 A |
| 最大漏源导通电阻 | 1.18 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CBCC-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 极性/信道类型 | P-CHANNEL |
| 最大功率耗散 (Abs) | 42 W |
| 最大脉冲漏极电流 (IDM) | 18 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| FSYE923A0R3 | FSYE923A0R1 | FSYE923A0R4 | FSYE923A0D1 | FSYE923A0D3 | |
|---|---|---|---|---|---|
| 描述 | 6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3 | 6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3 | 6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3 | 6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3 | 6A, 200V, 1.18ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, SMD0.5, LCC-3 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DLCC | DLCC | DLCC | DLCC | DLCC |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | _compli | not_compliant | not_compliant | not_compliant | _compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (Abs) (ID) | 6 A | 6 A | 6 A | 6 A | 6 A |
| 最大漏极电流 (ID) | 6 A | 6 A | 6 A | 6 A | 6 A |
| 最大漏源导通电阻 | 1.18 Ω | 1.18 Ω | 1.18 Ω | 1.18 Ω | 1.18 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大功率耗散 (Abs) | 42 W | 42 W | 42 W | 42 W | 42 W |
| 最大脉冲漏极电流 (IDM) | 18 A | 18 A | 18 A | 18 A | 18 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Renesas(瑞萨电子) | - | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
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