AP10N70W
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
0.6Ω
10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The TO-3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,
ruggedized design and cost-effectiveness.
The TO-3P package is
widely
preferred for commercial-industrial
applications.
The device is suited for switch mode power supplies ,DC-AC
converters
and high current high speed switching circuits.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
± 30
10
6.3
40
174
1.39
2
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
50
10
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum
Thermal Resistance, Junction-case
Maximum
Thermal Resistance, Junction-ambient
Value
0.72
40
Unit
℃/W
℃/W
201022072-1/4
Data & specifications subject to change without notice
AP10N70W
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1.0mA
V
GS
=10V, I
D
=5.0A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=10A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=10A
R
G
=10Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5
-
-
-
36
8.3
11.5
15
20
52
23
630
20
2
Max. Units
-
0.6
4
-
10
100
±100
57
-
-
-
-
-
-
-
-
3
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
1950 3120
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
3
3
Test Conditions
T
j
=25℃, I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
575
10.6
Max. Units
1.5
-
-
V
ns
uC
t
rr
Q
rr
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1.0mH , R
G
=25Ω , I
AS
=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP10N70W
20
16
T
C
=25 C
16
o
I
D
, Drain Current (A)
10V
6.0V
5.0V
T
C
=150
o
C
12
10V
6.0V
5.0V
4.5V
I
D
, Drain Current (A)
12
8
8
V
G
= 4.0V
4
4.5V
4
V
G
=4.0V
0
0
5
10
15
20
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3.2
2.8
1.2
I
D
=5A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2.4
1.1
2
1
1.6
0.9
1.2
0.8
-50
0
50
100
150
0.8
25
50
75
100
125
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
T
j
= 150
o
C
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
1
0.8
0.6
0.1
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP10N70W
f=1.0MHz
16
10000
V
GS
, Gate to Source Voltage (V)
I
D
=10A
12
C
iss
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
C
oss
100
8
4
C
rss
0
0
20
40
60
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
100us
0.2
I
D
(A)
0.1
1ms
1
0.1
0.05
P
DM
0.02
T
c
=25 C
Single Pulse
o
10ms
100ms
1S
DC
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-3P
E
A
SYMBOLS
Millimeters
MIN
NOM
MAX
φ
A
4.50
0.90
1.80
1.30
0.40
1.40
19.70
14.70
15.30
4.45
17.50
3.00
4.80
1.00
2.50
--
0.60
--
20.00
15.00
--
5.45
--
3.20
5.10
1.30
3.20
2.30
0.90
2.20
20.30
15.30
16.10
6.45
20.50
3.40
c1
D
D1
b
b1
b2
c
c1
D
D1
E
b1
b2
e
L
φ
L
c
b
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-3P
Part Number
Package
10N70W
YWWSSS
LOGO
Date Code (YWWSSS)
Y
：Last
Digit Of The Year
WW：Week
SSS
：Sequence
stm32/stm8
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