(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
stg
, T
J
Value
100
Unit
V
1.0
50
−65
to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm
2
copper, 1 oz FR4 Board.
Symbol
Y
JCL
R
qJA
R
qJA
Value
14
75
280
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Symbol
V
F
Value
0.76
0.84
0.61
0.68
40
0.5
Unit
V
I
R
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
www.onsemi.com
2
MBRA1H100, NRVBA1H100, NRVBA1H100N
TYPICAL CHARACTERISTICS
100
I
F
, FORWARD CURRENT (A)
150°C 125°C 25°C
10
I
F
, FORWARD CURRENT (A)
100
150°C 125°C
10
25°C
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
I
R
, REVERSE CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
1
0.1
0.01
0.001
0.0001
25°C
150°C
10
1
0.1
0.01
25°C
0.001
150°C
125°C
125°C
0.0001
0.00001
0
10
20
30
40
50
60
70
80
90
100
0.00001
0
10
20
30
40
50
60
70
80
90 100
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
dc
1.5
Square Wave
1.0
R
qJL
= 14°C/W
P
FO
, AVERAGE POWER DISSIPATION (W)
2.0
1.0
T
J
= 175°C
0.8
dc
0.6
0.4
0.2
0
Square Wave
0.5
0
135
140
145
150
155
160
165
170
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
T
L
, LEAD TEMPERATURE (°C)
I
O
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRA1H100, NRVBA1H100, NRVBA1H100N
TYPICAL CHARACTERISTICS
140
120
C, CAPACITANCE (pF)
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
T
J
= 25°C
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
50% (DUTY CYCLE)
100
R(t) (C/W)
20%
10%
5.0%
2.0%
1.0%
10
1.0
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (6 mm
2
pad)
100
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
10
R(t) (C/W)
Figure 9. Thermal Response, Junction−to−Ambient (1 in
2
pad)
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
STYLE 1
STYLE 2
SCALE 1:1
H
E
E
DATE 23 SEP 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
A
A1
GENERIC
MARKING DIAGRAM*
xxxx
AYWWG
STYLE 1
xxxx
A
Y
WW
G
xxxx
AYWWG
STYLE 2
L
c
SOLDERING FOOTPRINT*
4.000
0.157
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2.000
0.079
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G”,
may or may not be present.
2.000
0.079
SCALE 8:1
mm
inches
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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