8TQ...GS
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
• 175 °C T
J
operation
Base
cathode
2
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
D
2
PAK
1
Cathode
3
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
8A
80/100 V
The 8TQ Schottky rectifier series has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 µs sine
8 Apk, T
J
= 125 °C
Range
VALUES
8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
8TQ080GS
80
8TQ100GS
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
8
850
A
230
7.50
0.5
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 0.5 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93416
Revision: 18-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8TQ...GS
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
8A
Maximum forward voltage drop
See fig. 1
V
FM (1)
16 A
8A
16 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.72
0.88
0.58
0.69
0.28
7
500
8.0
10 000
mA
pF
nH
V/µs
V
UNITS
Schottky Rectifier, 8 A
T
J
= 125 °C
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
2
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
8TQ080GS
8TQ100GS
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93416
Revision: 18-Jun-08
8TQ...GS
Schottky Rectifier, 8 A
Vishay High Power Products
1000
100
T
J
= 175 °C
I
R
- Reverse Current (mA)
10
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 150 °C
1
0.1
0.01
0.001
0.0001
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10 20
30
40 50 60 70
80
90 100 110
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single
pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93416
Revision: 18-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8TQ...GS
Vishay High Power Products
180
Schottky Rectifier, 8 A
7
Allowable Case Temperature (°C)
170
165
160
155
150
145
DC
Average Power Loss (W)
175
6
5
4
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Square
wave (D = 0.50)
80 %
rated V
R
applied
DC
2
1
0
See
note (1)
140
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93416
Revision: 18-Jun-08
8TQ...GS
Schottky Rectifier, 8 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
8
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
T
2
Q
3
100
4
G
5
S
6
TRL
7
-
8
Current rating (8 = 8 A)
T = TO-220
O = Schottky “Q” series
Voltage ratings
G = Schottky generation
S = D
2
PAK
None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
080 = 80 V
100 = 100 V
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
http://www.vishay.com/doc?95046
http://www.vishay.com/doc?95058
http://www.vishay.com/doc?95032
http://www.vishay.com/doc?95291
Document Number: 93416
Revision: 18-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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